ID 原文 译文
41556 最后，优化了基于开尔文源极电感和功率源极寄生电感并联的补偿策略，并通过双脉冲实验验证了此并联补偿策略下的动态均流效果。 Finally, the compensation strategy of Kelvin source inductance in togetherwith power source parasitic inductance was optimized, and the dynamic current balancing effect of thisparallel compensation strategy was verified by double pulse test.
41557 采用旋涂法与水热法在掺氟二氧化锡 ( FTO) 上 制 备 了 Ce 掺 杂 Bi2 S3 /Fe2 O3( Ce-Bi2 S3 /Fe2O3 ) 异质结， The Ce-doped Bi2 S3 /Fe2O3 (Ce-Bi2 S3 /Fe2O3) heterojunction was fabricated on fluorinedoped tin dioxide (FTO) by spin coating method and hydrothermal method.
41558 对样品的组成、形貌及其光电性能进行了研究分析。 The composition, morphologyand photoelectric properties of the samples were studied and analyzed.
41559 结果显示，Ce-Bi2 S3 /Fe2O3的 X 射线衍射 ( XＲD) 图谱中各衍射峰位与 Bi2 S3 /Fe2O3相似，无新的相产生，但在 2θ 为 24. 92° ( 130) 与 28. 65° ( 211) 的衍射峰强度有所降低，而在 2θ 为 35. 65° ( 110)时有所增强; The results show that the diffractionpeaks in X-ray diffraction (XＲD) spectra of Ce-Bi2 S3 /Fe2O3 are similar to those of Bi2 S3 /Fe2O3, and nonew phases are generated.But the intensity of the diffraction peaks are reduced at 2θ of 24.92° (130) and28.
41560 在 Ce-Bi2 S3 /Fe2O3的 X 射线能谱 ( EDS) 中发现了 Ce 元素。 65° (211) , while enhanced at 2θ of 35. 65° (110) . Ce element was found in the energy dispersivespectrometer (EDS) spectrum of the Ce-Bi2 S3 /Fe2O3.
41561 光电性能测试结果表明，在模拟太阳光的照射下 Ce-Bi2 S3 /Fe2O3的光电压为 0. 347 V，比 Bi2 S3 /Fe2O3 ( 0. 281 V) 提高了 23. 5 %; The photoelectric performance test results show thatunder the simulated sunlight the photovoltage of Ce-Bi2 S3 /Fe2O3 is 0.347 V, which is 23.5% higher thanthat of Bi2 S3 /Fe2O3 (0.281 V) .
41562 光电流密度达到 2. 31 mA·cm－2，比 Bi2 S3 /Fe2 O3 ( 0. 53 mA·cm－2) 提高了约3.36 倍; The photocurrent density reaches 2.31 mA·cm－2, which is about 3.36times higher than that of Bi2 S3 /Fe2O3 (0.53 mA·cm－2) .
41563 电化学阻抗谱 ( EIS) 显示，在光照下 Ce-Bi2 S3 /Fe2 O3 具有最低的界面阻抗，表明Ce-Bi2 S3 /Fe2O3中的载流子被更有效地分离和转移。 The electrochemical impedance spectroscopy(EIS) shows that Ce-Bi2 S3 /Fe2O3 has the lowest interface impedance under light, indicating that the carriers in Ce-Bi2 S3 /Fe2O3 are separated and transferred more effectively.
41564 采用等离子体增强原子层沉积 ( PEALD) 技术在单晶硅衬底上成功制备了具有 ( 002)晶面择优取向的氮化铝 ( AlN) 晶态薄膜，为设计新型压电功能器件提供了思路。 AlN crystalline thin films with preferred orientation of (002) crystal plane weresuccessfully prepared on monocrystalline silicon substrates by plasma enhanced atomic layer deposition(PEALD) technique. It provides an idea for the design of novel piezoelectric functional devices.
41565 利用椭圆偏振光谱仪 ( SE) 、原子力显微镜 ( AFM) 、X 射线衍射仪 ( XＲD) 、X 射线光电子能谱仪 ( XPS) 对样品的生长速率、表面形貌、晶体结构、薄膜成分进行了表征和分析。 By usingthe spectroscopic ellipsometer (SE) , atomic force microscope (AFM) , X-ray diffractometer (XＲD)and X-ray photoelectron spectrometer (XPS) , the growth rate, surface morphology, crystal structureand thin film composition of the samples were characterized and analyzed.