| ID | 原文 | 译文 |
| 41536 | 为解决常规 AlGaN/GaN 高电子迁移率晶体管 ( HEMT) 因源极电子注入栅极右侧高场区造成的雪崩击穿，并提高器件的击穿电压，提出了一种具有栅源间本征 GaN ( i-GaN) 调制层的新型 AlGaN/GaN HEMT 结构。 | To solve the avalanche breakdown of conventional AlGaN/GaN high electron mobilitytransistors (HEMTs) caused by source electrons injected into the high electric field area on the right sideof the gate, and to improve the breakdown voltage of the devices, a new AlGaN/GaN HEMT structurewith an intrinsic GaN (i-GaN) modulation layer between gate and source was proposed. |
| 41537 | 新结构器件在反向耐压时将调制层下方部分区域的二维电子气 ( 2DEG) 完全耗尽，扩展了沟道的夹断区，有效阻止了源极电子向栅极右侧高场区的注入。 | The device withthe new structure completely depleted the two-dimensional electron gas (2DEG) in the partial area underthe modulation layer during the reverse withstand voltage, which expanded the pinch-off region of thechannel and effectively prevented source electrons from being injected into the high electric field area onthe right side of the gate. |
| 41538 | 仿真结果表明，通过设置适当的调制层长度和厚度，器件的击穿电压可从常规结构的 862 V 提升至新结构的 1 086 V，增幅达 26%。 | The simulation results show that by setting appropriate modulation layer lengthand thickness, the breakdown voltage of the device can be increased from 862 V for the conventionalstructure to 1 086 V for the new structure, an increase of 26%. |
| 41539 | 同时，GaN 调制层会微幅增大器件的比导通电阻，对阈值电压也具有一定的提升作用。 | At the same time, the GaN modulationlayer will slightly increase the specific on-resistance of the device, which also has a certain lifting effecton the threshold voltage. |
| 41540 | 提出了通过增大欧姆接触电极包围角提高 GaN 基太赫兹肖特基二极管的截止频率的方法，该方法减小了空气桥结构平面肖特基二极管的串联电阻，进而提高了器件的截止频率。 | The method of increasing the ohmic contact electrode surrounding angle was proposed toimprove the cut-off frequency of GaN-based terahertz Schottky diodes.It can reduce the series resistanceof the air-bridge planar Schottky diodes, and thus increase the cut-off frequency of the devices. |
| 41541 | 设计并制备了不同欧姆接触电极包围角的空气桥结构平面肖特基二极管，通过对器件 I-V 特性及C-V特性的测量，可知随着欧姆接触电极包围角的增大，肖特基二极管的串联电阻减小，而肖特基二极管的总电容并没有受影响。 | The airbridge planar Schottky diodes with different ohmic contact electrode surrounding angles were designed andfabricated.The measurements of the I-V characteristic and C-V characteristic of the diodes show that theseries resistance of Schottky diodes decreases with the increase of the ohmic contact electrode surroundingangle, while the total capacitance is not affected. |
| 41542 | 欧姆接触电极全包围结构的肖特基二极管截止频率为264 GHz，约为欧姆接触电极包围角为 180°器件的 1. 6 倍。 | The cut-off frequency of Schottky diode with ohmiccontact electrode completely surrounding structure is 264 GHz, which is about 1.6 times higher than thatof the one with 180° ohmic contact electrode surrounding angle. |
| 41543 | 设计了一种 1 550 nm 波长分布反馈 ( DFB) 激光器芯片，分析了有源区材料和波导结构对芯片参数的影响。 | A 1 550 nm wavelength distributed feedback (DFB) laser chip was designed.Theinfluences of the material in the active region and waveguide structures on chip parameters were analyzed. |
| 41544 | 分析了影响输出功率和相对强度噪声 ( ＲIN) 的因素，并进行了实验对比。 | The factors affecting the output power and relative intensity noise (ＲIN) were analyzed and compared experimentally. |
| 41545 | 通过对芯片材料结构和波导结构的优化设计提升了芯片效率、降低了 ＲIN; | Through the optimization design of chip material structure and waveguide structure, thechip efficiency was improved and the ＲIN was reduced. |