ID 原文 译文
41526 相比传统采用直接振荡和倍频实现的振荡器，该振荡器具有体积小、相位噪声低及电路简单等优点。 Compared with the conventional oscillation using directoscillation and frequency doubling, it has the advantages of small size, low phase noise and simplecircuit and so on.
41527 振荡器中的谐振电路采用多级串联谐振，电感采用微带线的形式，提高了谐振器的品质因数，进而降低了振荡器的相位噪声，且在谐振电路通过微带耦合方式实现了基频输出。 The resonant circuit of the oscillator with multi-stage series resonance and the inductorwith the form of microstrip line improve the quality factor of the resonator and reduce the phase noise ofthe oscillator.In the resonant circuit, the fundamental frequency output was realized by microstrip coupling.
41528 基于 GaAs 异质结双极晶体管( HBT) 工艺对振荡器进行了设计和流片，芯片尺寸为 1. 8 mm×1. 4 mm。 The oscillator was designed and fabricated based on GaAs heterojunction bipolar transistor (HBT)technology.And the chip size is 1.8 mm×1.4 mm.
41529 在 5 V 工作电压和 0 ～13 V 调谐电压条件下，振荡器的输出频率为 42. 1 ～ 46. 2 GHz，电流为 120 mA，输出功率为1 dBm，1 /2 次谐波抑制大于 15 dB，相位噪声为－60 dBc /Hz@ 10 kHz、－85 dBc /Hz@ 100 kHz 和－105 dBc /Hz@ 1 MHz。 Under the operating voltage of 5 V and tuning voltagerange of 0－13 V, the output frequency of the oscillator is 42.1－46.2 GHz, the current is 120 mA, theoutput power is 1 dBm, the 1 /2 harmonic suppression is more than 15 dB, and the phase noises are－60 dBc /Hz@ 10 kHz, －85 dBc /Hz@ 100 kHz and －105 dBc /Hz@ 1 MHz.
41530 界面质量是影响 GaN MOS 器件性能以及可靠性的主要因素之一， The interface quality is one of the main factors that affect the performance and reliabilityof GaN MOS devices.
41531 Al2O3 栅介质与极性 GaN 界面间插入超薄非晶 AlN 作为钝化层可以有效改善 GaN 栅界面特性， The characteristics of the GaN gate interface can be effectively improved by inserting ultra-thin amorphous AlN as a passivation layer between the Al2O3 gate dielectric and the polar GaNinterface.
41532 针对 AlN 钝化层生长方式研究了 GaN 界面优化特性。 Aiming at growth methods of the AlN passivation layer, the optimization characteristics of GaNinterface were studied.
41533 通过 GaN MOS 电容的 C-V 和 J-V 特性，结合透射电子显微镜( TEM) 表征分析，对比了不同生长条件的 AlN 插入层对 GaN MOS 电容的界面特性的影响。 Through the C-V and J-V characteristics of GaN MOS capacitors and combinedwith the transmission electron microscope (TEM) characterization and analysis, the effects of AlN insertion layers under different growth conditions on the interface characteristics of GaN MOS capacitors werecompared.
41534 相比常规热生长 AlN 钝化层制备的样品，以等离子体 NH3 为 N 源在 300 ℃ 下生长 AlN 钝化层制备的 GaN MOS 电容的频散和滞回特性均得到显著改善，界面态密度也略有改善。 Compared with the sample prepared with the conventional thermally grown AlN passivationlayer, the dispersion and hysteresis characteristics of the GaN MOS capacitor prepared by using plasmaNH3 as the N source to grow the AlN passivation layer at 300 ℃ were significantly improved, and the interface state density was also slightly improved.
41535 分析认为，经过等离子体 NH3 的轰击作用有效地抑制了 GaN 表面上 Ga—O 键的形成，在 GaN 表面直接生长AlN，从而改善了界面特性。 The analysis shows that the bombardment of plasma NH3can effectively inhibit the formation of Ga—O bonds on the GaN surface, allowing AlN to grow directlyon the GaN surface, thereby improving the interface characteristics.