ID 原文 译文
41516 测试结果表明，人体模型 ( HBM) ESD 防护能力可达 4 kV，泄漏电流为 25. 45 nA。 The test results show that the ESD protection abilityof the human body model (HBM) can reach 4 kV and the leakage current is 25.45 nA.
41517 设计并流片实现了一款具有寄生电阻消除功能的远端测温芯片。 A remote temperature measurement chip with parasitic resistance cancellation functionwas designed and implemented.
41518 分析了远端测温原理和寄生电阻对测温精度的影响， The principle of remote temperature measurement and the influence ofparasitic resistance on the temperature measurement accuracy were analyzed.
41519 利用差分结构采集远端三极管产生的温度信号。 The differential structure was used to collect the temperature signal generated by the remote transistor.
41520 采用一阶 Σ-Δ模数转换器 ( ADC) 将温度信号进行量化， The first-order Σ-Δ analogto-digital converter (ADC) was used to quantify the temperature signal.
41521 并使用寄生电阻消除技术降低寄生电阻对测温精度的影响。 Meanwhile the parasitic resistance cancellation technology was used to reduce the influence of parasitic resistance on the temperaturemeasurement accuracy.
41522 该芯片采用 0. 18 μm BCD 工艺设计并流片， The chip was designed and fabricated by 0.18 μm BCD process.
41523 测试结果表明，当远端三极管在－40 ℃ 下，使用寄生电阻消除技术可以将 1. 5 kΩ 寄生电阻对测温精度的影响降低到 0. 5 ℃ 以内; The measurement results show that when the remote transistor is at －40 ℃, the influence of 1.5 kΩ parasitic resistance on the temperature measurement accuracy is reduced to less than 0.5 ℃ using the parasitic resistance cancellation technology.
41524 远端三极管在－40～125 ℃温度范围内，消除寄生电阻影响后远端测温芯片的 3σ 误差小于±0. 6 ℃。 When the remote transistor is at the temperature range of －40－125 ℃, the 3σ error of the remote temperature measurement chip is less than ± 0.6 ℃ after cancelling theinfluence of parasitic resistance.
41525 基于推推振荡器结构设计了一种低相位噪声的毫米波压控振荡器， A millimeter wave voltage controlled oscillator (VCO) with low phase noise was designedbased on the structure of the push-push oscillator.