ID 原文 译文
41496 金属纳米结构激发的表面等离激元(SPP)热载流子效应能够有效地俘获入射光，进一步增强光能与化学能之间的转换效率，是提高半导体光解水性能的一种可行方法。 The surface plasmon polariton(SPP) hot carrier effects excited by metal nanostructures can effectively capture the incident light and further enhance the conversion efficiency of solar-to-chemical energy, offering a feasible approach to improve the performance of semiconductor solar water splitting.
41497 合理地将金属纳米结构与半导体材料相结合，可以制备出高性能的光解水器件。 By properly combining metal nanostructures with semiconductor materials, high performance solar water splitting devices can be prepared.
41498 首先介绍了半导体光解水以及SPP热载流子效应的基本原理，并以此为基础介绍了SPP增强型半导体光解水反应的物理机理。 Firstly, the basic principles of the semiconductor solar water splitting and the SPP hot carrier effect are introduced, and on this basis, the physical mecha-nism of the SPP enhanced semiconductor solar water splitting reaction is introduced.
41499 随后，依据半导体的形貌不同，总结了SPP热载流子效应用于不同纳米结构的研究进展。 Then, according to different morphologies of semiconductors, the research progresses of the SPP hot carrier effect applied to devices with different nanostructures are summarized.
41500 最后，对基于SPP热载流子效应的半导体光解水研究的发展趋势与挑战进行了展望。 Finally, the development trends and challenges of semiconductor solar water splitting study based on the SPP hot carrier effect are prospected.
41501 设计了一款基于GSMC 130 nm CMOS工艺的像素级开关电容阵列(SCA)波形采样芯片。 A pixel-level switched capacitor array(SCA) waveform sampling chip based on GSMC 130 nm CMOS process was designed.
41502 该芯片由32×32像素阵列和读写控制电路组成，每个像素集成了裸露的顶层金属、pn结和32×32 SCA，裸露的顶层金属和pn结作为电荷收集电极，SCA用于存储波形信号，每个像素尺寸约为150μm×156μm。 The chip consisted of a 32×32 pixel array and a read-write control circuit.Each pixel was integrated with a bare topmetal, a pn junction and a 32×32 SCA.The bare topmetal and pn junction were used as charge collecting electrodes, and the SCA was used to store waveform signals.The size of each pixel is about 150 μm×156 μm.
41503 测试结果表明：拟合的直流传输函数与理论分析相符，该波形采样芯片的输入满量程约为1 V，单次成像模式下帧率可达10 MHz，直流噪声等效噪声电荷电子个数约为24 890， The test results show that the fitted DC transfer function agrees with the theoretical analysis.The input full scale of the waveform sampling chip is about 1 V, the frame rate is up to 10 MHz in single shot imaging mode, and the DC noise equivalent noise charge is about 24 890 electrons.
41504 对正弦波信号采样后能够比较好地还原出原始信号波形。 The original signal waveform can be recovered well after sampling the sine wave signal.
41505 以50μm厚的SiC为衬底，基于T型栅GaN HEMT工艺技术，设计并制作了一款V波段GaN功率放大器单片微波集成电路(MMIC)。 A V-band GaN power amplifier monolithic microwave integrated circuit (MMIC) was designed and fabricated based on T-gate GaN HEMT technology with the SiC substrate of 50 μm thickness.