ID 原文 译文
41476 针对该问题，文章提出了一种基于小波变换稀疏字典优化的图像稀疏表示方法。 To solve this problem, a sparse representation method based on sparse dictionary optimization of wavelet transform is proposed.
41477 该算法在图像小波变换的基础上构建图像过完备字典，利用同一场景图像的小波变换在纹理上具有内部和外部相似的属性，对过完备字典进行灰色关联度的分类，有效提高了图像表示的稀疏性。 Based on the wavelet transform of image, this algorithm constructs overcomplete dictionaries, and makes use of the similar attributes in interior and exterior on the texture in wavelet transform of images in the same scene, and classifies the over-complete dictionary with grey correlation degree, which improves the effectiveness of sparse representation.
41478 将该新算法应用于图像信号进行稀疏表示，以及基于压缩感知理论的图像采样和重建实验， The new algorithm is applied in image signal sparse representation and image sampling and reconstruction experiments based on compressive sensing theory.
41479 结果表明新算法总体上提升了重建图像的峰值信噪比与结构相似度，并能有效缩短图像重建时间。 The results show that the new algorithm improves the peak signal to noise ratio(PSNR)and structural similarity(SSIM)of reconstructed images as a whole, and can shorten the time of image reconstruction effectively.
41480 摩擦诱导选择性刻蚀具有加工成本低、流程简单、低加工损伤等优势，是实现单晶硅表面微纳米结构构筑的重要途径。 Friction-induced selective etching has advantages of low cost, simple operation, and low destruction, thus it is regarded as an important route to realize micro/nanofabrication on monocrystalline silicon surface.
41481 为探究摩擦诱导机械划痕在单晶硅表面微纳加工中的掩膜行为，实验研究了选择性刻蚀中机械划痕掩膜下的线/面结构形貌与高度特征，并将其与氧化层掩膜进行对比。 To investigate the mask effect of friction-induced mechanical scratch in micro/nanofabrication of silicon surface, the topography and height of line/area structures under mechanical scratch were studied in selective etching and compared with that under oxide layer.
41482 实验发现机械划痕掩膜性能与氧化层无明显差异，并讨论了两种不同掩膜下选择性刻蚀中纳米结构的形貌演变机理。 It was found that there was no significant difference in mask effect of mechanical scratch and oxide layer, and corresponding evolution mechanism of topography under two different masks was discussed.
41483 最后，实现了采用不同掩膜的复合纳米图案加工。 Finally, the fabrication of composite nano-patterns was achieved by combining mechanical scratch and oxide layer.
41484 研究结果可为基于摩擦诱导选择性刻蚀的单晶硅表面高质量可控加工提供依据。 The present study provides an important theoretical basis for the high-quality and controllable processing of silicon surface, which is based on friction-induced selective etching.
41485 分析了阱宽、垒高和应变对量子阱材料TE模和TM模折射率的影响，并剖析了其中的物理机理。 The effects of well width, barrier height and strain on the refractive index of TE mode and TM mode of quantum well are analyzed and the physical mechanisms were dissected.