ID 原文 译文
41456 进一步研究了单个聚晶颗粒表面不同区域的发射性能，发现多种因素对场发射的性能有影响。 The emission properties of different areas on the surface of single polycrystalline particles were further studied, and it is found that the field emission property will be affected by various factors.
41457 采用射频磁控溅射的方法，用96at%SnO2/4at%Sb2O3陶瓷靶在玻璃表面制备了锑掺杂氧化锡(ATO)薄膜。 Antimony doped tin oxide(ATO)films were deposited on glass substrate by magnetron sputtering using a ceramic target of 96 at% SnO2/4 at% Sb2 O3.
41458 研究了溅射功率、压强和后退火对薄膜近红外阻隔性能的影响， The effects of sputtering power, pressure and post annealing on the near-infrared(NIR)blocking property of ATO films were investigated.
41459 并采用Uv-Vis-NIR透射光谱、霍尔效应测试仪、XRD和SEM等设备对薄膜的性能和结构进行了测试和分析。 The Uv-Vis-NIR transmission spectra and Hall Effect were measured and the microstructure of the films was analyzed with XRD and SEM.
41460 结果表明，室温沉积的ATO薄膜近红外透光率较高，但在氮气中退火后，不同溅射压强和溅射功率下沉积的ATO薄膜的近红外透光率均显著降低。 It was demonstrated that the ATO films deposited at room temperature showed relatively high transmittance in NIR region, while after annealing in nitrogen, the ATO films deposited under different sputtering powers and pressures performed obvious decrease in NIR transmittance respectively.
41461 在氧含量为10%、压强为1.4Pa、溅射功率为200W时，室温下沉积的ATO薄膜在氮气中500℃下退火1h后，550nm处透光率由80.9%升高至85.8%，2 000nm处透光率由84.6%下降至23.0%。 For ATO films deposited at a sputtering power of 200 W with a pressure of 1.4 Pa in10% O2 atmosphere, the transmittance at 550 nm increased from 80.9%to 85.8% and that at 1500 nm decreased from 84.6%to 23.0%after annealing at 500℃for 1 hour in nitrogen.
41462 面向微光环境的高时间分辨成像需求，基于CMOS图像传感器工艺，设计并仿真验证了一种具有三角形状梯度掺杂且浮置扩散区域中置的超快电荷转移大尺寸光电二极管(PPD)像素器件。 Aiming at the needs of high time resolution imaging in low light environment, based on CIS process, a large-size PPD pixel device with ultra-fast charge transfer is designed and simulated, which owns a gradient-doped triangular shape and central floating diffusion region.
41463 它通过N埋层掺杂形状和梯度掺杂设计增强光生电荷传输路径的电势梯度，加速光生电荷从N埋层感光区域向电荷存储区域的转移。 The doping shape and gradient doping of the N-buried layer can enhance the gradient potential formed on the transmission path, thereby the transfer of the photo-generated charge from the N buried layer to the charge storage area will be accelerated.
41464 同时通过对传输管沟道的梯度掺杂，减小了沟道反弹电荷的水平，有效提升了光生电荷转移效率。 At the same time, by making the gradient doping of the transfer transistor channel, the rebound charge is reduced and the transfer efficiency is effectively improved.
41465 仿真结果表明，三角形枝状的圆形像素器件在30 000个电荷的情况下，在电荷转移效率达到99.9%时，电荷转移时间为1ns，同时其反弹电荷水平在1e-以下。 Simulation results show that the charge transfer time is 1 ns and the rebound charge level is below 1 e-when the triangular branch-shaped circular pixel device contains 30, 000 charges and the charge transfer efficiency reaches 99.9%.