ID 原文 译文
41446 区别于传统的在反应腔内HCl或Cl_2携带Ga源的结构，使用了外置Ga源的方法，可以较准确地调整GaCl/GaCl_3的组分占比、摩尔分数和浓度。 Different from the traditional reaction chamber in which Ga source carried by HCl or Cl2, we use the method of external Ga source, which can accurately adjust the component proportion, mole fraction and concentration of GaCl/GaCl3.
41447 另外，使用分子模拟软件Gaussian计算得到GaCl_3与O_2反应的活化能，通过实验数据拟合得到α-Ga_2O_3相变为β-Ga_2O_3的反应活化能。 In addition, the activation energy of the reaction between GaCl3 and O2 was calculated by molecular simulation software Gaussian, and the activation energy ofα-Ga2O3 convert to β-Ga2O3  was obtained by fitting the experimental data.
41448 在此基础上，对生长温度、GaCl/GaCl_3的组分占比进行了模拟，并给出了α-Ga_2O_3的优化生长条件。 On this basis, we researched the growth temperature and the composition ratio of GaCl/GaCl3, and then we concluded the optimal growth conditions of HVPEα-Ga2O3.
41449 利用COMSOL软件设计了一种基于S型Y分支SOI脊波导的石墨烯M-Z电光调制器，并对Y分支波导曲率半径、相位臂长度、芯层间距和输入输出直波导长度等结构参数对调制器的影响进行了分析。 In this paper, agraphene M-Z electro-optical modulator based on S-Y branch SOI ridge waveguide was designed by COMSOL, and the influence of the Y-branch waveguide curvature radius, the length of the phase arm, core spacing and input-output straight waveguide length on the modulator were analyzed.
41450 在此基础上对电光调制器的性能指标进行了计算和优化， On this basis, the performance index of the electrooptical modulator was calculated and optimized.
41451 最终设计出了3dB带宽为143GHz、消光比为15.05dB的硅基石墨烯M-Z电光调制器。 Finally, a silicon graphene M-Z electro-optical modulator with a 3 dB bandwidth of 143 GHz and an extinction ratio of 15.05 dB was designed.
41452 采用微波等离子化学气相沉积方法，以甲烷和氢气为反应气体，在镀有金属钛的陶瓷衬底上，制备了微米金刚石聚晶薄膜。 In this study, micron diamond polycrystalline films were prepared on the ceramic substrate coated with titanium by microwave plasma chemical vapor deposition method, with the mixed gases of methane and hydrogen as the reactive gases.
41453 利用扫描电镜、拉曼光谱、X射线光电子能谱对薄膜的化学组成、微观结构和表面形貌进行了表征。 The chemical composition, microstructure and surface morphology of the films were analyzed by SEM, Raman spectroscopy and X-ray experiments.
41454 用二级结构的场发射仪和扫描隧道显微镜研究了薄膜的场发射性能， The field emission performance of the thin films was studied by the field emission instrument of the secondary structure and scanning tunneling microscope,
41455 结果表明微米金刚石聚晶薄膜发射点主要来源于聚晶颗粒。 and the results indicated that the emission point of the micron diamond polycrystalline film mainly originated from the polycrystalline particles.