| ID | 原文 | 译文 |
| 41346 | 后仿真结果显示，在1.2V电源下其功耗小于100mW，单输入精度平均值为51.7ps，动态范围为3.4μm，且线性度良好。 | The post simulation results show that the power consumption is less than 100 mW, the average value of single input precision is 51.7 ps, the dynamic range is3.4μm, and chip presents good linearity under 1.2 Vpower supply. |
| 41347 | 该TDC芯片适用于飞行时间脉冲激光雷达的信号计时。 | Thus the TDC chip is suitable for signal timing of time-of-flight pulse lidar. |
| 41348 | 二硒化钨(WSe_2)具有双极导电特性，可以通过外界掺杂或改变源漏金属来调节载流子传输类型， | Tungsten diselenide(WSe2)has ambipolar conductivity characteristics, which can be adjusted by external doping or changing source/drain metals. |
| 41349 | 是一类特殊的二维纳米材料，有望在未来集成电路中成为硅(Si)的替代材料。 | It is a special type of two dimensional nanomaterials and is expected to replace silicon(Si)in integrated circuits in the future. |
| 41350 | 文章采用理论与实验相结合的方式系统分析了WSe_2场效应晶体管中的源漏接触特性对器件导电类型及载流子传输特性的影响， | In this paper, the theory and experiments were combined to systematically analyze the influence of the source/drain contact characteristics of WSe2 field effect transistor on the conductivity type and carrier transport characteristics of the device. |
| 41351 | 通过制备不同金属作为源漏接触电极的WSe_2场效应晶体管，发现金属/WSe_2接触的实际肖特基接触势垒高低极大地影响了晶体管的开态电流。 | By preparing WSe2 field effect transistors with different metals as the source/drain contact electrodes, it is found that the actual Schottky contact barrier height of the metal/WSe2 contact greatly affects the on-state current of the transistor. |
| 41352 | 源漏金属/WSe_2接触特性不仅取决于接触前理想的费米能级差，还受到界面特性，特别是费米能级钉扎效应的影响。 | The source/drain contact characteristics of the metal/WSe2 depend on the ideal Fermi level difference before contact, and also they will be affected by the interface characteristics, especially the Fermi level pinning effect. |
| 41353 | 针对标准CMOS工艺的单光子雪崩探测器(Single Photon Avalanche Detector，SPAD)，设计了一种可用于自由运转模式的高速淬灭电路。 | In this paper, a fast quenching circuit is designed and simulated for free-running CMOS single photon avalanche diode(SPAD). |
| 41354 | 为了实现淬灭电路的功能设计与精准仿真，根据实测的SPAD电流-电压曲线拟合得到了电流与电压间的多段式函数解析式，进一步建立了SPAD器件的Verilog-A行为级模型并与淬灭电路进行集成仿真与验证。 | In order to obtain more accurate simulation results, an enhanced SPAD simulation model is compiled using Verilog-A language, and I-V characteristic is expressed by three segmented functions. |
| 41355 | 淬灭电路采用基于电容感应的主被动淬灭结构， | The fast quenching circuit is based on mixed passive-active quenching and capacitive sensing. |