ID 原文 译文
41316 其中半导体型碳纳米管的长度是影响薄膜质量的重要因素之一。 The length of semiconducting carbon nanotubes is one of the important factors affecting the thin film.
41317 文章通过聚[9-(1-辛酰基)-9H-咔唑-2，7-二基](PCz)成功制备了高纯度半导体型碳纳米管溶液， In this paper, high-purity semiconducting carbon nanotube solution was successfully prepared by poly[9-(1-octanoyl)-9 H-carbazole-2, 7-diyl](PCz).
41318 经过循环沉积工艺，高效地降低了分散液中的短碳管含量，有效地提升了半导体型碳纳米管的平均长度， Through a cyclic deposition process, the short carbon nanotubes were effectively removed, and the average length of semiconductor carbon nanotubes was improved.
41319 在此基础上通过标准工艺成功制备了高性能碳纳米管薄膜晶体管。 On this basis, high-performance carbon nanotube thin film transistors were successfully prepared through standard process.
41320 结果显示，优化后的长碳纳米管溶液制备的薄膜晶体管具有优异的电学性能，其开关比高达107，迁移率高达34cm~2·V~(-1)·s~(-1)，比相应的短管性能提升了3倍。 The results show that the thin film transistor prepared by the optimized long carbon nanotube solution presents excellent electrical properties, with an on-off ratio of up to 107 and a mobility of up to 34 cm
41321 光纤布里渊传感中，本征存在的由温度和应变交叉引起的判断模糊问题，一直是光纤分布式传感领域的研究热点。 In fiber Brillouin sensing, the problem of ambiguous judgment caused by intrinsic cross between the temperature and the strain has always been a research hot topic in the field of distributed optical fiber sensing.
41322 针对这一问题，总结了四类解决方法:铺设参考光纤、双参量矩阵方程测量、双物理效应结合及特种光纤判别。 In response to this problem, four types of solutions are introduced in detail, which are laying reference fiber, two-parameter matrix equation measurement, combination of two physical effects and special fiber discrimination.
41323 对每一类解决方法的原理、系统、传感性能及特点进行了分析，并对各种方法进行了讨论、对比与评价。 The principles, system, sensing performance and characteristics of each specific solution are analyzed, and these methods are discussed, compared and evaluated.
41324 最后总结并展望了解决交叉敏感问题的研究方向。 Finally, it summarizes and looks forward to the research direction of solving cross-sensitivity issues.
41325 钳位电压(Vpin)是影响CMOS图像传感器(CIS)中钳位光电二极管(PPD)电荷转移效率和满阱电荷容量的关键物理量。 Pinning voltage(Vpin)is the key parameter affecting the charge transfer efficiency and full well capacity of the pinned photodiode(PPD)in CMOS image sensor(CIS).