ID 原文 译文
41256 同时其电阻率-温度曲线的热滞回线宽度较窄，在加热过程中相转变温度较高。 meanwhile, the width of thermal hysteresis loop of the resistivity-temperature curve is narrower, and the phase transition temperature is higher during the heating process.
41257 当氩氧比中氧含量增加时，沉积的VO_2薄膜中生成了少量非4价的钒氧化物。 A small amount of non-4-valent vanadium oxides were formed in the deposited VO2 films when the oxygen content in the argon-oxygen mixtures increases.
41258 结果表明，反应磁控溅射法制备的氧化钒薄膜的微结构、电阻率、相变温度等特性与氩氧比和后退火温度密切相关。 The results show that the micro-structure, resistivity and phase transition temperature of VO2 films prepared by reactive magnetron sputtering are closely associated with the argon-oxygen ratio of sputtering atmosphere and post-annealing.
41259 在全面梳理现有寄生供电系统的基础上，提出一种无需特殊工艺支持、可兼顾高速充电和低压差供电的智能多通路自适应调控寄生供电系统。 Based on a comprehensive review of the existing parasitic power supply system, an intelligent multi-channel adaptive control parasitic power supply system without special process support is proposed, which takes into account both high-speed charging and low voltage differential power supply.
41260 该方案利用充放电控制状态机，协同双器件并行控制结构，对三条供电线路进行自适应调控切换，在提升充电速度和效率的同时，进一步模糊功耗信息。 In this scheme, the state machine of charge and discharge control and the parallel control structure of two devices are used to adaptively control and switch the three power supply lines, so as to improve the charging speed and efficiency, and further blur the power consumption information.
41261 该方案可用于1-Wire芯片、高要求的光电等信息的采集以及实时监控等功能芯片的供电，并提升芯片的抗侧信道攻击能力。 The scheme can be used for the power supply of 1-Wire chip, high demand photoelectric information collection and real-time monitoring function chip, and improve the chip's ability to resist side channel attack.
41262 基于华虹宏利0.35μm体硅CMOS工艺完成了该方案的仿真，结果表明，该系统能够将芯片内外供电压差降低到0.1V以下，充电速度提升32%。 Based on the 0.35μm bulk silicon CMOS process of HHGrace, the simulation results show that the system can reduce the voltage difference between inside and outside the chip to less than 0.1 V, and increase the charging speed by 32%.
41263 为了研究不同驱动方式下LED结温的差异性，依据LED热结构模型，从功率传递角度构建了差分型LED电-热动态模型， In order to study the difference of LED junction temperature under different driving modes, a difference electro-thermal dynamic model of pulse-driven LED was constructed from the perspective of power transfer according to the thermal structure model.
41264 利用相同平均功率、不同频率的注入电功率，计算脉冲驱动条件下的LED结温。 And then, the junction temperature was calculated with injected powers which have same average power and different frequency.
41265 同时，采用正向电压法测量实际结温，对模型预测结温的准确性进行了分析。 Lastly, the actual junction temperature was measured by forward voltage method for theoretical verification.