ID 原文 译文
41246 光学带隙约为3.48eV;薄膜呈n型导电特性，电阻率为2.551×10~(-2)Ω·cm，载流子浓度高达1.876×10~(19) cm~(-3)，迁移率为13.04cm~2·V~(-1)·s~(-1); The as-grown GaN films are n-type with a carrier concentration up to 1.876×1019 cm-3, resistivity of 2.551×10-2Ω·cm and the hole mobility of 13.04 cm2·V-1·s-1.
41247 薄膜中Ga元素主要与N元素以Ga-N键生成GaN。 Most Ga elements form GaN with Ga-N bonds.
41248 天基目标测量具有全天时、不受大气干扰等优点。 Space-based target measurement has the advantages of being all-day and free from atmospheric interference,
41249 但与地面人卫测距相比，天基待测目标运动速度快且缺乏距离预报等先验信息，导致传统测距方法无法有效提取目标距离轨迹。 but compared with ground-based human-guarded ranging, the space-based target moves fast and the priori information such as distance prediction is not enough, which makes the traditional ranging methods fail to extract the target distance trajectory effectively.
41250 为此，文章提出了一种基于Hough变换的激光测距距离轨迹提取算法，利用目标回波点之间的线性相关性将直线检测算法引入回波轨迹的提取，具有适应天基探测特性、抗噪声能力强等特点。 To address this problem, in this paper, a laser ranging distance trajectory extraction algorithm based on Hough transform is proposed, which uses the linear correlation between target echo points to introduce the linear detection algorithm into the extraction of echo trajectories, and has the characteristics of adapting to the characteristics of space-based detection and strong anti-noise capability.
41251 实验结果表明，使用该方法提取的目标距离轨迹均方根误差优于2.72m。 The experimental results show that the root mean square error of the distance trajectory extracted by this method is better than 2.72 m.
41252 上述方法可以准确地提取高速移动目标的距离轨迹，为后续空间非合作目标的距离轨迹提取提供了新的途径。 The above method can accurately extract the distance trajectories of high-speed moving targets, providing a new way to extract the distance trajectories of subsequent spatial non-cooperative targets.
41253 采用反应直流磁控溅射法，通过调控溅射过程中的氩氧比，在石英玻璃衬底上制备了氧化钒薄膜，研究了溅射气氛及后处理条件对其微结构与电学性能的影响。 Vanadium oxide films were prepared on quartz glass substrates by reactive DC magnetron sputtering by adjusting the argon-oxygen flowing ratio in sputtering process, and the effect of sputtering atmosphere and post-treatment conditions on micro-structures and electrical properties of the films were investigated.
41254 经450和500℃退火，薄膜中易形成VO_2，而550℃退火时薄膜中会形成大量非4价的钒氧化物。 Being annealed under 450 and 500℃is beneficial to the formation of VO2, nevertheless, a large number of non-4-valent vanadium oxides appear in the films when the annealing temperature increases to 550 ℃.
41255 薄膜在较高温度500℃下退火时结晶度增加，但薄膜颗粒之间的间隙更为明显，导致电阻率显著提高; The crystallization of the films increases after they were annealed at 500℃, however, the cracks between the particles of films become more obvious, resulting in a significant increase in the resistivity of the films;