ID 原文 译文
41236 针对均匀背景热流条件下的散热问题，构建了类叶状微通道矩形热沉模型， For the heat dissipation problem with uniform background heat flow, a leaf-like microchannel rectangular heat sink model was constructed.
41237 基于构形理论，在给定热沉体积与液冷通道总体积的约束条件下，以热沉最高温度和压降最小化为目标，以微通道单元数、主通道与分支通道的夹角、主通道与分支通道的管径比为设计变量进行了优化设计。 Based on the constructal theory, under the constraints of a given heat sink volume and the total volume of the liquid cooling channels, with the minimizations of maximum temperature and pressure loss of the heat sink as the objectives, the optimal designs are carried out with the element number of microchannels, the angle between the main channel to the branch channel, and the tube diameter ratio of the main channel to the branch channel as the design variables.
41238 结果表明:通过增加微通道单元数、减小主通道与分支通道的夹角、采用较小的主通道与分支通道之管径比，可以降低热沉的最高温度，但是会增大压降损失。 The results show that, by increasing the element number of microchannels, reducing the angle between the main channel and the branch channel, and adopting a smaller tube diameter ratio of the main channel to the branch channel, the maximum temperature can be reduced, but the pressure loss increases.
41239 采用数值模拟的方法研究了具有相同的平均In组分，但In组分的分布不同的3个紫色InGaN/GaN单量子阱样品的光谱特性。 The spectral characteristics of three violet InGaN/GaN single quantum well samples with the same average In composition but different In composition distributions are studied in this paper.
41240 通过分析样品的电致发光谱、能带结构、波函数交叠以及载流子浓度分布等，发现沿生长方向阱内In组分线性增加的单量子阱样品的发光效率最高，而In组分线性减小的样品发光效率最低。 By analyzing the electroluminescence spectra, energy band structures, wave function overlap and carrier concentration distribution, it is found that the single quantum well sample with linearly increased In composition along the growth direction has the highest luminescence efficiency, while the sample with linearly decreased In composition has the lowest luminescence efficiency.
41241 这是因为In组分的线性增加能够减弱极化场对价带的影响，使阱内价带变得更加平缓。 It is considered that the linear increase of the In composition can weaken the influence of the polarization field on the valence band, making the valence band in InGaN well smoother, which not only reduces the height of the hole injection barrier, but also increases the hole concentration in InGaN well.
41242 这不仅降低了空穴的注入势垒高度、增大了阱中的空穴浓度，还增强了阱内电子-空穴波函数的交叠积分，提高了辐射复合几率，从而使In组分线性增加的量子阱的发光效率显著提高。 The overlap integral of the electron-hole wave function in the well is also enhanced, and the probability of radiative recombination is improved, so the luminescence efficiency of the InGaN quantum well with the linear increase of In composition is significantly increased.
41243 采用等离子增强原子层沉积技术于蓝宝石衬底上生长GaN薄膜，研究氮等离子体预处理衬底对薄膜结晶性能的影响。 High-quality GaN heteroepitaxy films were realized by using nitrogen plasma pretreatment of the sapphire substrate prior to the plasma-enhanced atomic layer deposition(PEALD)at320℃.
41244 利用X射线衍射仪、扫描电子显微镜、原子力显微镜、X射线光电子能谱仪等手段对薄膜的晶体结构、表面形貌及薄膜成分进行表征和分析。 The crystal structures, surface morphology, elemental composition of the deposited GaN films were characterized by XRD, SEM, AFM and XPS.
41245 结果表明，经预处理的蓝宝石衬底上生长的GaN薄膜晶体质量明显提高，沿c轴高度择优取向生长; The results show that GaN films grown on the pretreated substrate exhibit improved crystalline quality with highly-preferred(002)growth direction.