ID 原文 译文
41186 提出了一种顶锥壳阵列超宽带全向超材料吸收器, An ultra-wideband omni-directional metamaterial absorber based on dome-coneshell array was proposed.
41187 研究了圆顶锥壳的几何参数、顶部的几何形状以及不同密排方式对宽带吸收的影响。 The influences of the geometric parameters of dome-cone-shell, the shape of the top and the different packing modes on the wideband absorption were studied.
41188 研究了包覆金属薄膜的圆顶锥壳阵列在太阳辐射能谱区的超宽带吸收特性,结果显示在250~2 500nm范围内的平均吸收率达到95.39%。 The ultra-wideband absorption characteristics of a metal-coated dome-cone shell array in the solar radiation spectrum are studied.The results show that the average absorption rate in the range of 250~2 500 nm reaches 95.39%.
41189 在0°~65°的大角度入射下,对于TE和TM偏振的平均吸收率分别为92.7%和94.59%,表明所提出的结构具有偏振无关和入射角不敏感性。 The average absorptivity for TE and TM polarization is 92.7%and 94.59%, respectively, at a large incidence angle from 0°to 65°, indicating that the proposed structure is polarization independent and incident angle insensitive.
41190 空气质量1.5加权平均吸收率为95.24%,证明能够有效地吸收地球上的太阳辐射。 The weighted average absorption rate of air mass 1.5 is 95.24%, proving that it can effectively absorb solar radiation on earth.
41191 通过结合胶体球光刻技术和表面镀膜成功制备了所提出的吸收器,初步测试结果表明,其吸收性能存在提升空间。 The proposed absorber was successfully prepared by combining colloidal ball lithography and surface coating.Primary test results show that the absorption performance still needs to be improved.
41192 文章基于第一性原理研究了碱金属掺杂的SnO_2的能带结构以及态密度。 The band structures and electronic density of states of alkali metal doped SnO2 systems were calculated by using the first-principles theory.
41193 研究结果表明:掺杂能够使能级增多,很好地调节带隙值。 The results show that with the increase of the energy levels of the doped SnO2 system, the band gap can be adjusted well.
41194 Li,Na,K,Rb掺杂的SnO_2材料,价带顶有能级穿过费米线,材料呈现出半导体特性。其中Rb掺杂使材料在费米面附近产生杂质能级。 The energy levels of the valence band top cross the Fermi line in the Li, Na, K, Rb doped SnO2 system, and the system shows the characteristics of semiconductors.
41195 而Cs,Fr掺杂的SnO_2材料,价带顶向低能级方向移动,费米能级不再穿过价带,费米线附近出现轨道杂化,两者相比Fr掺杂使费米面附近能级分布更加离散。 More energy levels were introduced to the Fermi line in Rb-doped SnO2 system, because the valence band top moves to the low energy region in Cs, Fr doped SnO2, the energy levels of the valence band top do not cross the Fermi line.The density of states of the doped system is hybrids near the Fermi line.