| ID | 原文 | 译文 |
| 41156 | 设计并制备了一种斜条脊波导结构压应变高偏振度多量子阱超辐射发光二极管。 | Ridge-waveguide superluminescent diodes(SLD)with compressive strain multiquantum-well were designed and fabricated. |
| 41157 | 设计的脊波导出光面TiO_2/SiO_2四层宽带增透膜的TE模式反射率约为10-6，分析了脊波导角度偏差和膜层厚度偏差对增透膜反射率的影响。 | The TE mode reflectivity of the TiO2/SiO2 fourlayer broadband antireflection film is about 10-6, and the effects of the deviation of the angle of the ridged waveguide and the thickness of the film on the reflectivity of the antireflection film are analyzed. |
| 41158 | 实验结果表明，在250mA直流电流驱动下，所设计的超辐射发光二极管芯片单管输出功率可达22.7mW，出射光谱FWHM约为37.3nm，光谱纹波系数低于0.15dB，TE模式输出光强占主导，偏振度约为19.2dB。 | The experimental results show that the single-tube output power of the designed SLD chip can reach 22.7 mW, the output spectrum FWHM is about 37.3 nm, the spectral ripple coefficient is less than 0.15 dB, and the TE mode output intensity is dominant with a polarization degree of about 19.2 dB under 250 mA DC current. |
| 41159 | 基于Taguchi实验方法和Tracepro仿真软件，研究了Mini LED背光模组中LED芯片大小、芯片发光半角、芯片出光面到液晶层的距离等因素，对液晶面板照度均匀性的影响规律并对其进行了相应分析。 | The influence of the factors such as the LED chip size, the emission half Angle and the distance from the luminous surface to the LCD panel layer in Mini LED backlight modules, on the illumination uniformity of the LCD crystal panel was studied and analyzed with Taguchi experimental method and Tracepro software. |
| 41160 | 研究结果表明:芯片出光面到液晶层的距离对照度均匀性影响最大，影响因素的权重占比达到82.88%;发光半角占比14.33%:芯片大小占比为14.33%。 | The results show that the distance from the luminous surface to the liquid crystal layer has the greatest influence on the illuminance uniformity, and the weight of the influencing factors is 82.88%, and that of the luminous half angle and the chip size is both 14.33%. |
| 41161 | 根据研究结果，固定发光半角与芯片尺寸，调节出光面与液晶面板层的距离，得到了最优的照度均匀度。 | According to the research results, the optimal illumination uniformity is obtained by fixing the luminescence half angle and the chip size and adjusting the distance between the luminous surface and the LCD panel layer. |
| 41162 | 在玻璃基底上镀35nm厚的ITO薄膜，通过椭偏仪测量ITO薄膜的线性介电常数。 | The ITO film with the thickness of 35 nm was plated on the glass substrate, and the linear permittivity of the ITO film was measured via spectroscopic ellipsometry. |
| 41163 | 由于ITO具有高掺杂浓度，因此其介电常数可以用Drude模型来进行量化计算，得到其介电常数近零(ENZ)波长约为λ=1 100nm。 | Owing to the large doping concentration of ITO, its permittivity can be quantified by Drude model, and the epsilon-near-zero wavelength is obtained as 1 100 nm. |
| 41164 | 借助双温模型计算电子温度和晶格温度随时间的变化，根据电子温度的升高计算等离子体频率的变化，将其带入Drude模型中，可以得到一个新的介电常数， | The varying rules of electronic temperature and lattice temperature with time can be calculated through the double-temperature model.The change of plasma frequency can be calculated with the increasing electronic temperature, and then it is taken into the Drude model to get a new permittivity. |
| 41165 | 最后可以通过计算折射率的变化，从而求出非线性折射率n2。 | Finally, by calculating the variation of the refractive index, the nonlinear refractive index n2 can be obtained. |