ID 原文 译文
41126 实验结果表明，该算法具有良好的配准效率和精度，同时具有较大的适用范围。 Experimental results show that this method has good registration efficiency and accuracy, and has a wide range of application.
41127 分别使用掺镓和常规掺硼单晶硅片制备了太阳电池与组件，对电池进行了光照和空焊处理， The solar cells and modules were fabricated with gallium doped and boron-doped monocrystalline silicon wafers respectively.Light-induced degradation(LID)treatment and soldering without welding rod were conducted on the two kinds of solar cells.
41128 再采用Halm电池电性能测试仪测试了两种单晶硅太阳电池和组件在光照和空焊实验前后的光电性能。 The photovoltaic performance changes of the solar cell and modules induced by LID and soldering without welding rod were tested with HalmI-Vtester.
41129 实验结果表明，在相同光照条件下，采用掺镓单晶硅片所制太阳电池的光衰率比用掺硼单晶硅片的低0.91%。 Test results indicate that, the LID ratio of the Ga-doped silicon solar cells was 0.91% lower than that of the B-doped samples.
41130 空焊后的掺镓单晶硅太阳电池各项光电性能参数的一致性没有出现明显变化，这有利于减少太阳电池之间的失配损失。 Moreover, after the soldering without welding rod, the consistency of the optoelectronic performance of the Ga-doped silicon wafer has little change,
41131 还发现掺镓单晶硅太阳电池组件的CTM(cell to module)值高于掺硼单晶硅太阳电池组件的CTM值。 and its cell-to-module(CTM)ratio is higher than that of the Bdoped monocrystalline silicon solar cell module.
41132 总之，掺镓单晶硅太阳电池能更好地抑制光致衰减效应，并减小串焊工艺对太阳电池光电性能的影响，获得更高的太阳电池组件功率。 In conclusion, Ga-doped monocrystalline silicon solar cells can better suppress the photo-attenuation effect, reduce the influence of the series welding process on the photoelectric performance of solar cells, and obtain higher power of solar cell component.
41133 采用一步水热法，以钨酸钠(Na_2WO_4·2H_2O)为原料，草酸(H_2C_2O_4)为结构导向剂，在FTO衬底上制备了具有高活性(002)面的WO_3纳米片薄膜。 WO3 nanoplate films with highly active(002)facets were prepared on the FTOsubstrate with one-step hydrothermal method by using sodium tungstate dihydrate (Na2WO4·2H2O)as the raw material and oxalic acid(H2C2O4)as the structure-directing agent.
41134 利用XRD，FESEM对薄膜的物相和形貌进行了分析，通过UV-Vis，PL对薄膜的能带结构和载流子的分离能力进行了表征， The phase and morphology of the samples were characterized by XRD and FESEM.The energy band structure and carrier separation ability of the film were characterized by UV-Vis and PL.
41135 通过电化学工作站对WO_3薄膜的光电性能进行了研究。 The photoelectric properties of WO3nanoplate films were characterized by electrochemical workstation.