ID 原文 译文
41106 实验结果表明，在1.7m的测量距离下，所搭建单相机测量系统的位置与转角测量精度可达0.02mm和0.003°，验证了所研究方法的有效性和实用性。 After correction by the compensation equation, the positioning accuracy of the single-camera measurement system can reach 0.02 mm and 0.003°under the measurement distance of 1.7 m.
41107 针对空间环境下的大面阵光学望远镜的大尺寸快门，设计了一种关于空间环境的高保真寿命试验方案。 Aiming at the large-size shutter of the large-area-array optical telescope in the space environment, a high-fidelity life test program for the space environment is designed.
41108 该方案以大口径真空罐为平台，充分考虑了大尺寸快门在空间运行时面临的复杂环境因素，为其提供了极为真实的在轨运行环境。 A large-caliber vacuum tank is used as the platform, and the complex environmental factors of large shutter in space operation are fully considered, providing a very real on-orbit operating environment for it.
41109 针对该快门在轨开合100万次的寿命指标，设计了具体的试验方案，并搭建了高保真空间环境试验平台，利用加速寿命试验的原理使快门机构在真空罐中运行。 Aiming at the life index of the shutter opening and closing 1 million times on orbit, a specific test plan was designed, and a high-fidelity space environment test platform was built, which used the principle of accelerated life test to make the shutter mechanism operate in a vacuum tank.
41110 结果表明该试验方案可为快门提供极为真实的空间在轨运行环境，能够支撑其完成100万次的开合动作。 The results show that the test program can provide a very real space on-orbit operation environment for the shutter, and can support it to complete 1 million opening and closing actions.
41111 SiC作为第三代半导体材料的典型代表，因具有优异的物化性能，在功率器件领域具有极大的应用前景。 As a typical representative of the third generation semiconductor materials, SiC has great application prospects in the field of power devices due to its excellent physical and chemical properties.
41112 文章简要介绍了激光制孔的基本原理， In this paper, the basic principles of laser drilling are briefly introduced.
41113 综述了SiC的长脉冲与超短脉冲激光制孔研究进展， The research progresses of long pulse and ultra-short pulse laser drilling of SiC are summarized.
41114 对比了长脉冲与超短脉冲激光的加工特点，分析了不同脉冲宽度下SiC的制孔效果。 The processing characteristics of long pulse and ultra-short pulse laser are compared, and the drilling effects of SiC under different pulse widths are analyzed.
41115 同时，介绍了GaN/SiC，AlGaN/GaN/SiC等SiC功率器件的激光制孔研究现状。 At the same time, the research status of laser drilling of SiC power devices, such as GaN/SiC and AlGaN/GaN/SiC are introduced.