ID 原文 译文
41086 优选出兼顾加工质量与效率的工艺参数区间,即能量密度10~14J/cm~2,扫描速度20~30mm/s。 Considering the processing quality and efficiency, the optimized parameters of energy density of 10~14 J/cm2 and scanning speed of 20~30 mm/s were selected.
41087 基于此,以螺旋扫描轨迹于AlN陶瓷上进行制孔应用,成功实现了无崩边及微裂纹等缺陷的圆孔、方孔及跑道孔加工。 Based on this, the spiral scanning track was applied to drill holes on AlN ceramic. The round, square and runway holes without micro-crack and edge chipping were successfully realized.
41088 该研究验证了飞秒激光加工高质量多孔型的可行性, This study verifies the possibility of femtosecond laser processing high-quality holes with multi-shapes.
41089 推动了硬脆材料激光制孔技术在半导体功率器件领域的应用。 It promotes the application of laser drilling technology for hard and brittle materials in the field of semiconductor power devices.
41090 针对基于物理气相输运法的碳化硅(SiC)单晶生长系统,考虑对流换热的影响建立了传热与传质数学模型, Considering the influence of convective heat transfer, a mathematical model of heat and mass transfer was established for the growth system of large-size SiC single crystal based on physical vapor transport method.
41091 并采用数值模拟的方法研究了其生长系统内的温度场与气相流场。 The distribution of temperature field and gas phase flow field in the growth system was studied by numerical simulation.
41092 研究表明:坩埚内温度、温度梯度以及加热效率随线圈匝间距与线圈直径的增加而逐渐降低。 The results show that the temperature, temperature gradient and heating efficiency in the crucible will gradually decrease with the increase of coil turn spacing and coil diameter.
41093 旋转坩埚可有效解决因线圈螺旋形状而导致的温度场不均匀性。 The rotating crucible can effectively solve the non-uniformity of temperature field caused by the coil spiral shape.
41094 通过不断调整线圈与坩埚之间的相对高度,可保证高品质晶体生长所需的最优温度场环境。 By continuously adjusting the relative position between the coil and the crucible, the optimal temperature field environment for high quality crystal growth can be ensured.
41095 此外,坩埚内径尺寸的增加,会加剧其内部自然对流效应。 In addition, the increase of the inner diameter of the crucible will aggravate the natural convection effect.