ID 原文 译文
41056 分别利用超像素块滤波和中值方块滤波求取两层暗通道，对两层暗通道进行像素级结合并构造高斯加权函数进行加强，然后采用引导滤波优化透射率图。 Then a pixel-level fusion was performed on the two-layer dark channels and a Gaussian weighting function was constructed for enhancement.
41057 把雾图转化到HSV空间并提取包含天空等的白色区域，引入概率函数取白色区域前10%像素点的明度分量平均值作为大气光估计值。 The white area that contains the sky was extracted based on the HSV color space and the average value of the brightness component of the top 10% of the pixels in the white area was taken as the atmospheric light.
41058 实验结果表明，所提算法能较好地保留图像细节并去除景深突变处的残雾，同时能改善伪影现象。 Experimental results demonstrate that the proposed algorithm can preserve details and remove residual fog while improving artifacts.
41059 晶圆低温直接键合技术与传统键合方式相比具有对晶片及器件损伤小、无中介层污染、无需外部电场辅助等优势， Compared with traditional bonding methods, wafer direct bonding at low temperature has the advantages of low bonding loss, no intermediate layer pollution and no external electric field assistance.
41060 在功率型半导体光电及电力电子器件、大功率固体激光器、MEMS、光电集成等领域具有巨大的应用潜力。 It has important application potential in power semiconductor optoelectronic and power electronic devices, high power solid-state lasers, MEMS, optoelectronic integration and other fields.
41061 文章从低温直接键合技术的发展历程入手，重点介绍了湿法疏水键合、湿法亲水键合和等离子体活化键合的物理化学机制。 In this paper, the physical and chemical mechanisms of hydrophobic bonding, hydrophilic bonding and plasma-activated bonding are introduced emphatically based on the development of low temperature direct bonding technology.
41062 系统阐述了低温直接键合的工艺流程和键合强度的表征方法，探讨了低温直接键合的技术发展趋势，并对低温直接键合工艺的改善和创新应用拓展进行了展望。 The technological processes of low temperature direct bonding and the characterization method of bond strength are described systematically, the development trend of low temperature direct bonding technology is discussed, and the improvement and innovative application of low temperature direct bonding technology are prospected.
41063 通过湿法腐蚀工艺成功制备了具有绝热结构的锰钴镍氧(MCNO)热敏电阻探测器。 The infrared bolometer based on Mn-Co-Ni-O(MCNO) films with thermal isolation structure is designed and fabricated by wet etching process.
41064 测试表明，绝热结构使得热敏探测器的热导大幅降低，在真空环境下仅为没有绝热结构器件的1/20，典型热导率值为1.37mW/K。 Test results indicate that, the thermal conductance of the bolometer with thermal isolation structure is greatly reduced and it is 1.37 mW/K under vacuum, which is only 1/20 of that without thermal isolation structure.
41065 通过V-I测试并结合理论曲线拟合发现，MCNO薄膜材料的热导率随温度增高而减小。 The V-I measuring experiments and curve fitting prove that the thermal conductance of MCNO increases with the temperature.