ID 原文 译文
41046 设计了一款用于高速图像传感器的可自调节、加速补偿CMOS电荷泵锁相环电路，通过在传统锁相环电路拓扑中，附加"双模式"逻辑时控的、低功耗加速充电补偿模块，实现了锁定时间与功耗的双重优化。 A self-adjustable CMOS charge pump phase-locked loop(CPLL) circuit with accelerated compensation for high-speed image sensors is designed. Regarding to traditional PLL topology, a " dual-mode" logical clock-controlled and low-power accelerated charging compensation module is added to achieve synchronize optimization in locking time and power consumption.
41047 基于180nm/1.8 V CMOS工艺完成锁相环的电路设计和性能仿真，结果表明，基于所提出的加速补偿方案，改进后的锁相环可有效满足图像传感器对低功耗、高速、高频和低噪声输出特性的需求。 Based on the 180 nm/1.8 V CMOS process, the circuit design and performance simulation are implemented. The results show that, based on the proposed acceleration compensation scheme, the improved PLL can meet the requirements of high-speed image sensoring application with low noise, low power and high frequency.
41048 在输入频率为1 GHz的参考信号时，压控振荡器可达到0.55～2.82 GHz，即2.27 GHz的频率范围，相位噪声为-98.149 dBc/Hz@1 MHz，锁定时间缩短至5.2 μs，整体功耗仅为1.98 mW，同时输出的抖动噪声可低至2.81 μV/Hz~(1/2)@1MHz， When a reference signal of 1 GHz is input, the proposed voltage-controlled ring-oscillator reaches 0.55～2.82 GHz with 2.27 GHz frequency range, phase noise is-98.149 d Bc/Hz@1 MHz, locking time is shortened to 5.2μs, average power consumption is only 1.98 mW, and the jitter noise in output can be as low as 2.81μV/Hz@1 MHz.
41049 多个性能指标优于所对比的同类锁相环电路。 The proposed PLL has significant superior circuit in power and locking time compared with some other design cases.
41050 基于CO_2红外气体传感器微型化、智能化、低功耗的发展要求，创新性地提出一种中心温度为407℃的CO_2检测用微电子机械系统(MEMS)红外光源芯片。 Based on the requirements of miniaturization, intelligence and low power of CO2 infrared gas sensor, a special MEMS infrared source chip for CO2 detection is innovatively proposed with the center temperature of 407 ℃.
41051 采用X型悬空桥式微热板结构，内部发热区域以环形走线的钨(_W)电极为加热丝，以SiO_2和Si_3N_4双层薄膜作为机械支撑保护层，可防止钨电阻丝氧化并提高寿命。 The chip is a micro hot plate with X-type suspending bridge structure. And the internal heating area is tungsten heater with ring routing structure, SiO2 and Si3N4 dielectric thin films as the mechanical support film.
41052 电热耦合有限元仿真分析显示，该光源芯片具有发热区温度分布均匀、热响应时间短、功耗低的优点。 The infrared source chip is optimized with uniform temperature distribution in heating zone, short thermal response time and low power by the finite element simulation analysis.
41053 采用10.16cm~(4inch~)MEMS工艺完成了芯片的流片制造。 The chip is fabricated by 10.16 cm(4 inch) MEMS process.
41054 测试结果表明，该光源芯片在24ms内即可快速升温至工作温度407℃，功耗低至46mW，工作电压为2.85V，工作电流为16.2mA，具有热响应时间快、功耗低、集成度高的特点。 The results show that, the temperature of this chip can quickly rise to 407℃ within only 24 ms, the power consumption is as low as 46 m W, the working voltage is 2.85 V, and the current is 16.2 mA. The chip has the advantages of fast thermal response, low power dissipation and high integration.
41055 针对暗通道先验算法去雾后图像存在伪影和景深突变处留有残雾的问题，提出一种基于双重暗通道结合与高斯加权的去雾方法。 To address the problem that the dark channel prior algorithm will produce artifacts and residual fog, a dehazing method was proposed based on double dark channel and Gaussian weighting, which use superpixel block filtering and median block filtering to obtain two layers of dark channels, respectively.