ID 原文 译文
41026 研究了静电电压、喷涂高度和喷涂量对涂层光吸收性能的影响。 The effects of electrostatic voltage, spraying height and spraying amount on the optical absorption properties of the coatings were studied.
41027 结果表明，静电电压为9k V、喷涂高度为30mm和喷涂量为35μL时制备的CNT/CNP-TiN涂层光吸收性能最佳，在400～1400nm波长范围内的平均吸收率高达97.1%。 The results show that when the electrostatic voltage is 9 kV, spraying height is 30 mm and spraying amount is 35 μL, CNT/CNP-TiN coating exhibits excellent optical absorption performance, and the average absorption in the range of 400～1400 nm reaches 97.1%.
41028 TiN纳米粒子、CNT和CNP搭建成蜂窝状团簇，团簇间形成的几百纳米到微米级的光学腔以及团簇内的几十到几百纳米的光学腔可捕获不同波段的光，拓宽吸收带宽，并通过多次反射增强吸收。 Honeycomb clusters are constructed by TiN nanoparticles, CNT and CNP. Optical cavities of several hundred nanometers to micrometers formed between the clusters and optical cavities of several tens to several hundred nanometers within the clusters can trap lights with different wavebands, and broaden the absorption bandwidth.
41029 此外，TiN纳米粒子、CNT和CNP具有良好的光散射效应，且大部分散射光可被光学腔捕获，进一步提高吸收率。 In addition, TiN nanoparticle, CNT and CNP have good light scattering effect, and most of the scattered light is trapped by the optical cavities, so as to further improve the absorption.
41030 基于第一性原理，应用Materials Studio软件对2H-MoS_2的能带结构、态密度、光学特性等进行了模拟研究。 Based on the first principles, the materials studio software was used to simulate the energy band structure, density of states, and optics properties of 2 H-MoS2.
41031 结果表明:MoS_2是间接带隙半导体，禁带宽度约为1.1275e V; The results show that MoS2 was an indirect band gap semiconductor with a band gap of about 1.25 eV; the material had a certain absorption in the ultraviolet to visible wavelength range, and the absorption coefficient decreases with the increase of wavelength.
41032 材料在紫外至可见光波段具有一定吸收，吸收系数随波长增加而减小，拉曼光谱在375和400cm~(-1)分别出现了E_(2g)~1和A_(1g)两个振动模式。 Raman spectra showed E2g1 and A1g  was an indirect band gap semiconductor with a band gap of about 1.25 eV; the material had a certain absorption in the ultraviolet to visible wavelength range, and the absorption coefficient decreases with the increase of wavelength.
41033 在39.5°，33.5°等位置处出现了(103)，(101)等晶面的衍射峰。 Raman spectra showed E-1, respectively. Typical diffraction peaks such as(103) and(101) appeared at the positions 39.5° and 33.5°.
41034 采用磁控溅射的方法，在石英衬底上制备了不同厚度的MoS_2薄膜，发现该薄膜具有(101)择优取向，在375和407cm~(-1)处也分别出现了E_(2g)~1和A_(1g)两个拉曼峰。 Magnetron sputtering method was also used to prepare MoS2 films with different thicknesses on a quartz substrate in this paper. It was found that the film had(101) preferred orientation, E2g1 and A1g in the Raman spectrum.
41035 随着厚度的增加，薄膜在可见光波段透过率下降，光学带隙向长波长移动，模拟结果与实验结果基本吻合。 As the film thickness increased, the transmittance of the film in the visible light band decreased, and the optical band gap shifted toward longer wavelengths. The simulation results were basically in agreement with the experimental results.