ID 原文 译文
18655 首先研究了单一激励下S-M系统的簇发行为及分岔机制，得到一种对称型“sub-Hopf/sub-Hopf”簇发模式。 Firstly, the bursting behavior andbifurcation mechanism of S-M system under single excitation are studied, and a symmetric bursting pattern of“sub-Hopf/sub-Hopf” is obtained.
18656 然后借助De Moivre公式将多频激励系统转化为单频激励系统，结合快慢分析法重点分析了附加激励幅度对“sub-Hopf/sub-Hopf”簇发模式的影响。 Then the multi-frequency excitation system is transformed into singlefrequency excitation system by using De Moivre formula, and the influence of additional excitation amplitudeand frequency on “sub Hopf / sub Hopf” bursting mode is analyzed by using the fast-slow analysis method.
18657 对应于不同附加激励幅度该文发现了两种新的簇发模式，即扭曲型“sub-Hopf/sub-Hopf”簇发和嵌套级联型sub-Hopf/sub-Hopf”簇发。 As a result, two new bursting patterns named as twisted “sub-Hopf/sub-Hopf” bursting and nested “sub-Hopf/sub-Hopf” are found under different amplitudes of the additional excitation.
18658 借助时序图、分岔图和转换相图分析了相应的簇发机制。 The corresponding bursting mechanisms are analyzed with time history diagram, bifurcation diagram and transformation phase diagram.
18659 最后，采用Multisim软件搭建电路模型并进行仿真实验，得到的实验结果与理论分析结果相吻合，从而实验证明了忆阻型S-M系统的簇发模式。 Finally, Multisim simulation results, which are in good agreement with the numerical simulation results, areprovided to verify the validity of the study.
18660 为了探究分数阶形式下该类系统的动力学特性，该文将分数阶微积分引入到忆阻退化Jerk系统中，增加了一个自由度，提升了系统性能。 To investigate the dynamic characteristics of this type of system in the fractional-order case,fractional-order calculus is introduced into memristive hypogenetic Jerk system, which adds one degree offreedom and improves system performance.
18661 通过相图、分岔图、李雅普诺夫指数谱、复杂度混沌图等分析了系统的动力学特性，并采用DSP技术，实现了该系统的数字电路。 The dynamical characteristics of the system are analyzed by phasediagram, bifurcation diagram, Lyapunov exponent spectrum, complexity chaotic diagram, etc., and the digitalcircuit of the system is realized by employing DSP technology.
18662 研究结果表明，系统拓展到分数阶后有两种不同的单涡卷吸引子，系统随初值变化呈现倍周期分岔路径，在某些特定初值处系统演化路径出现跃变。系统具有无限多个吸引子共存。 The research results show that when the system is extended to the fractional order, the system presents a period doubling bifurcation path with the initial value, and the evolution path of the system changes abruptly at some specific initial values, showing infinite coexistence of attractors.
18663 荷控忆阻器在寄生元件存在的情况下，可能发生记忆衰退现象。 In the presence of parasitic elements, fading memory may occur in charge controlled memristors.
18664 该文采用忆阻器动力学路线图和仿真的方法，研究了忆阻器寄生电阻和寄生电容对其动力学特性的影响。 The effects of parasitic resistance and capacitance on the dynamic characteristics of memristor are studied by using the dynamic route map and simulation method.