ID 原文 译文
2253 实验结果表明，本文方法能有效提高非刚性运动、大位移运动以及运动遮挡等困难运动类型光流估计的精度与鲁棒性。 The experimental results demonstrate that the proposed method has the higher ac-curacy and better robustness of optical flow estimation for difficult motion such as non-rigid movement, large displacementmotion and motion occlusion.
2254 基于相关向量机的剩余寿命预测方法，核函数是影响相关向量机模型预测性能的重要因素。 For the remaining useful life (RUL)prediction method based on relevance vector machine (RVM), kernel function is the important item of RVM model for the final prediction result.
2255 目前的相关向量机预测模型以单核为主，且核函数的选择存在较大主观性，导致所构建的预测模型性能有限。 The current RVM prediction models are domina-ted by single kernel, and the selection of RVM kernel is a little bit subjective. So, the prediction performance of the construc-ted RVM model is limited.
2256 本文提出一种融合多个核函数构建相关向量机预测模型的方法，通过果蝇算法优化多个核函数优化组合的线性方程系数，提高了模型的预测性能，并将该方法应用于预测锂离子电池的循环剩余寿命。 To address this problem, a multi kernel RVM model is proposed for the RUL estimation, usingthe fruit fly optimization algorithm (FOA)to find the best corresponding coefficients of multi kernel in the linear combina-tion of multi kernel functions, and to improve the prediction performance of RVM model applied in the RUL estimation of lithium-ion battery.
2257 分别采用美国 NASA 和马里兰大学的电池退化数据集，对本文的方法进行了实验验证。 The battery test data sets of the national aeronautics and space administration (NASA)and the center ofadvanced life cycle engineering (CACLE)in the university of Maryland are used respectively. Experiments have been car-ried out to test the performance of the proposed method.
2258 实验结果表明:多核相关向量机预测方法的平均绝对误差和均方根误差都小于最优的单核相关向量机预测方法。 The results show that the mean absolute error (MAE)and rootmean square error (RMSE)of multi kernel RVM method are both less than the single kernel RVM algorithm.
2259 具有高介电常数的栅绝缘层材料存在某种极化及耦合作用，使得 ZnO-TFTs 具有高的界面费米能级钉扎效应、大的电容耦合效应和低的载流子迁移率。 The gate insulator material with high dielectric constant has some polarization and coupling effect, which makes ZnO-TFTs have high interface Fermi level pinning effect, large capacitive coupling effect and low carrier mobility.
2260 为了解决这些问题，本文提出了一种使用 SiO2修饰的 Bi1. 5Zn1. 0Nb1. 5O7作为栅绝缘层的 ZnO-TFTs 结构，分析了 SiO2修饰对栅绝缘层和 ZnO-TFTs 性能的影响。 To solve these problems, in this paper, a kind of ZnO-TFTs structure using SiO2 modification of Bi1. 5Zn1. 0Nb1. 5O7as gate insu-lator was proposed. The effect of SiO2 modification on the performance of gate insulator and ZnO-TFTs was systematically investigated.
2261 结果表明，使用 SiO2修饰后，栅绝缘层和 ZnO-TFTs 的性能得到显著提高，使得 ZnO-TFTs 在下一代显示领域中具有非常广泛的应用前景。 The results showed that the properties of gate insulators and ZnO-TFTs were significantly improved after SiO2 modification, which makes ZnO-TFTs have a very wide application prospect in the next generation display field.
2262 栅绝缘层的漏电流密度从 4. 5 × 10－ 5A/cm2降低到 7. 7 × 10－ 7A/cm2，粗糙度从 4. 52nm 降低到 3. 74nm，ZnO-TFTs 的亚阈值摆幅从 10V/dec 降低到 2. 81V/dec，界面态密度从 8 × 1013cm－ 2降低到 9 × 1012cm－ 2，迁移率从 0. 001cm2/(V·s)升高到 0. 159cm2/(V·s)。 The leakagecurrent density and roughness of gate insulators decreased from 4. 5 × 10－ 5A /cm2to 7. 7 × 10－ 7A /cm2and from 4. 52nm to3. 74nm, respectively. The sub-threshold swing and interface state density of ZnO-TFTs decreased from 10V /dec. to 2. 81V /dec. and from 8 × 1013cm－ 2to 9 × 1012cm－ 2, respectively. The mobility of ZnO-TFTs increased from 0. 001cm2/(V·s)to0. 159cm2/(V·s).