ID 原文 译文
15875 为Φ-OTDR系统的工程推广提供了一种有效的抗衰落噪声方式。 which could provide an effective anti-fading noise method for the engineering promotion of the Φ-OTDR system.
15876 以WCl6和NiCl2·6H2O为钨源和镍源、PVP为表面活性剂、无水乙醇为溶剂，采用溶剂热法制备得到非化学计量比的W18O49和Ni掺杂W18O49纳米线（Ni-W18O49），并利用雾化沉积法将W18O49和Ni-W18O49纳米线喷涂在柔性ITO-PET透明导电基底得到W18O49/ITO-PET和NiW18O49/ITO-PET电致变色薄膜。 Non-stoichiometric W18O49 nanowires and Ni-doped W18O49 nanowires(Ni-W18O49)were prepared by solvothermal method using WCl6 and NiCl2·6 H2O as tungsten and nickel precursor,PVP as surfactant and anhydrous ethanol as solvent. W18O49 and Ni-W18O49 nanowires were sprayed on the transparent conductive substrate of ITO-PET by atomization deposition method to obtain W18O49/ITO-PET and Ni-W18O49/ITO-PET electrochromic thin films.
15877 测试结果表明，Ni掺杂使W18O49/ITO-PET电致变色薄膜着色/褪色响应时间由16.5 s/8.2 s减小为10 s/5.8 s，着色效率由56 cm2·C-1增至74 cm2·C-1。 The experimental results indicated that the coloring/bleaching response time of W18O49/ITO-PET electrochromic film decreased from16.5 s/8.2 s to 10 s/5.8 s by Ni doping. The coloring efficiency of W18O49/ITO-PET electrochromic films increased from 56 cm2·C-1 to 74 cm2·C-1 after Ni doping.
15878 Ni-W18O49/ITO-PET电致变色薄膜经1 500次充放电后容量保持率仍为70%。 Ni-W18O49/ITO-PET electrochromic films has a capacity retention of 70% after 1 500 charging-discharging cycles.
15879 Ni掺杂W18O49使W5+和氧空位含量增加，降低电荷转移阻力，从而改善电致变色性能。 Ni doped W18O49 could increase the contents of W5+ and oxygen vacancy,reduce the charge transferring resistance,and improve the electrochromic performance.
15880 在光频域反射（Optical Frequency Domain Reflection,OFDR）技术的分布式光纤测量方法的基础上，提出了基于欧拉梁理论推导出光纤测量应变与土体水平位移之间的转换关系，并通过室内实验进行了验证。 Based on the distributed optical fiber measurement method of optical frequency domain reflection(OFDR),the conversion relationship between the strain measured by optical fiber and the horizontal displacement of soil based on Euler beam theory was proposed,which was verified by indoor experiments.
15881 证实了分布式光纤测水平位移的可行性和应变-位移转换关系的准确性，且将传统测斜仪法与光纤测量方法分别在基坑工程中得到了应用。 The feasibility of the distributed optical fiber measurement of horizontal displacement and the accuracy of the strain-displacement transformation relationship were verified. The optical fiber measurement method was applied in a foundation pit project.
15882 通过试验，光纤测量方法能够准确详细地量测深层土体在开挖过程中的水平位移变化情况。 Through the test,the optical fiber measurement method was testified to be able to accurately measure the horizontal displacement of deep soil in the process of excavation.
15883 采用金属有机化学气相沉积（MOCVD）法在600℃下在蓝宝石衬底上外延生长了GaN薄膜，研究了热氧化温度对GaN薄膜的微观结构和光学特性的影响。 GaN thin films were epitaxial grew on sapphire substrates at 600 ℃ by metal organic chemical vapor deposition(MOCVD)method. The effect of thermal oxidation temperature on the microstructural and optical properties of GaN thin films were investigated.
15884 实验表明600℃生长的GaN薄膜结晶质量较差，随着热氧化温度逐渐增加，GaN薄膜的结晶质量逐渐提高，当温度提高到900℃时，GaN和Ga2O3的相共存。 The results showed that the crystalline quality of GaN film grew at 600 ℃ was poor,and the crystalline quality of GaN films increased gradually with temperature increasing. When the temperature increased to 900 ℃,both GaN and Ga2O3 phase coexisted.