ID 原文 译文
15795 为了优化屏蔽栅沟槽型MOSFET(Shielded Gate Trench MOSFET,简称SGT结构)的电场分布,将高k介质代替部分沟槽绝缘介质层,提出了高k屏蔽栅沟槽型MOSFET(高k SGT结构)。 To optimize the electric field distribution of shielded gate trench MOSFET ( SGT-MOSFET), a high k SGTstructure was proposed by replacing part of the trench insulation layer with high k dielectric. The working principle of high kSGT structure was analyzed.
15796 分析了高k SGT结构的工作原理,通过在高k介质底部引入新的电场峰值,使电场分布更均匀以提高器件的耐压。 By introducing a new electric field peak at the bottom of high k dielectric, the electric fielddistribution was more uniform, and the breakdown voltage of the device was improved as well.
15797 因此在不增加掩模的基础上,有效提高了器件的击穿电压。 Therefore, the breakdown voltage of the device is effectively improved without adding the masks
15798 应用于射频接收机前端的低噪声放大器(Low-Noise Amplifier, LNA)通常需要有更小的噪声和更高的增益,针对这一问题,基于65 nm CMOS工艺并采用四级放大器级联的方式设计了一种77 GHz(E波段)低噪声放大器。 The low-noise amplifier (LNA) used in the front end of RF receiver usually needs less noise and high gain. Tosolve this problem, a 77 GHz low noise amplifier (LNA) was proposed. The LNA achieves low noise and high gain using a4-stage cascode structure, which was designed in 65 nm CMOS process.
15799 为了优化噪声系数、提高增益并改善输入阻抗匹配,LNA设计引入了源极负反馈传输线和级间补偿传输线。 To optimize the noise figure (NF), increase thegain and improve the input impedance matching, the source negative feedback transmission line and inter-stage compensationtransmission line were introduced.
15800 仿真结果为:LNA在1.2 V的电源供电下,功耗为41 mW,79 GHz处的增益为22 dB,噪声系数(Noise Figure, NF)为7.1 dB,输入1 dB压缩点为-23 dBm,输入回波损耗为-28.5 dB,输出回波损耗为-20.5 dB,版图尺寸为400μm×860μm。 The simulation results show that the maximum gain is 22 dB at 79 GHz and the NF is 7. 1dB. The input 1 dB compression point is -23 dBm. The input and output return losses at 79 GHz are -28. 5 dB and -20. 5dB, respectively. The size of the layout is 400 μm×860 μm.
15801 因此,LNA在噪声系数与增益性能上的表现良好,适用于毫米波接收系统。 Hence, the LNA achieves the excellent performance in NF andgain and is suitable for millimeter-wave receiver system.
15802 氮掺杂石墨烯因具有高比表面积和优异的电化学性能在储能领域具有广泛的应用前景。 Nitrogen－doped graphene has a wide application prospect in the field of energy storage due to its high specificsurface area and excellent electrochemical performance.
15803 本文对近年来通过水热法、球磨法和微波辐射法制备氮掺杂石墨烯的研究概况进行了综述,总结了氮掺杂石墨烯作为电极材料在超级电容器中的应用研究进展,并对氮掺杂石墨烯和超级电容器的未来发展做了概括性展望。 This paper review s three commonly used methods for preparingnitrogen－doped graphene in recent years w hich include hydrothermal method，ball milling method and microwave radiationmethod． It then summarizes the research progress of nitrogen－doped graphene as electrode material of supercapacitors． The future development of nitrogen－doped graphene and supercapacitors has also been predicted simply．
15804 氮掺杂石墨烯作为电极材料可进一步提高超级电容器的能量密度和功率密度,但实现商业化应用仍需不断完善和研发其制备工艺。 Nitrogen doped grapheneas electrode material can further improve the energy density and power density of supercapacitors，but its preparation processstill needs to be improved and developed to realize commercial application