ID 原文 译文
15745 因有机酸掺杂可提高聚苯胺的导电性及其电化学性能而备受关注。 Polyaniline ( PANi) with organic acid doping has attracted much attention due to superior conductivity andelectrochemical performance．
15746 分别以有机酸十二烷基苯磺酸(DBSA)、水杨酸(SA)与盐酸作为共掺杂剂,采用化学氧化聚合法制备聚苯胺(PANi)材料。 In this study，PANi samples were synthesized by oxidative polymerization using organic acidsas co－dopants，such as dodecylbenzene sulfonic acid ( DBSA) ，salicylic acid ( SA) and inorganic acid ( hydrochloric acid) ．
15747 采用傅里叶红外光谱仪(FTIR)与扫描电子显微镜(SEM)对聚苯胺样品进行微观结构与形貌表征,并通过循环伏安(CV)、恒电流充放电(GCD)及交流阻抗(EIS)测试分析其电化学性能。 The microstructure and morphology of polyaniline samples were characterized by Fourier transform infrared spectrometer( FTIＲ) and scanning electron microscope ( SEM) ． Besides，their electrochemical performances were investigated by cyclicvoltammetry ( CV) ，galvanostatic charge－discharge ( GCD) and electrochemical impedance spectroscopy ( EIS) tests．
15748 研究结果表明,与单一盐酸掺杂的聚苯胺相比,采用有机酸DBSA共掺杂合成聚苯胺对其分子链结构影响较大,电化学性能变差;而采用有机酸SA共掺杂合成的聚苯胺具有更好的电化学性能,在1 A/g电流密度下,比电容可达533.3 F/g,聚苯胺电极材料与电解液间具有更快的离子扩散行为。 The results show that，compared with the polyaniline only doped with hydrochloric acid，the DBSA /HCl co－doped polyanilinehas a greater influence on its molecular chain structure，w hile its electrochemical performances become worse． In addition，the SA /HCl co－doped polyaniline has better electrochemical properties than that of hydrochloric acid doped polyaniline，andthe specific capacitance can reach 533. 3 F/ g at a current density of 1 A / g． Moreover，the faster ion diffusion behaviorbetween PANi electrode material and the electrolyte was observed．
15749 为掌握焊点形态参数对引脚表贴元器件振动可靠性的影响,采用HyperMesh和ANSYS软件建立了带引线的塑料芯片载体(PLCC)和小外形(SO)封装元器件的印刷电路板组件(PCBA)有限元精确模型并进行随机振动仿真,研究了悬出、侧面长度、填充高度等焊点形态参数变化对J形引脚、L形引脚、焊点与焊盘上振动应力的影响规律。 In order to investigate the influence of the solder joint morphological parameters on the vibration reliability of theleaded surface mount components，an precise finite element model of printed circuit board ( PCB) assembly with plasticleaded chip carrier ( PLCC) and small outline ( SO) packages was established，and then a series of random vibrationsimulation were performed using HyperMesh and ANSYS． The dependence of the vibration stress in J － leads，L － leads，solder joints and solder pads on different morphological parameters，such as overhang size，side length and filling height，was comprehensively studied．
15750 结果预示,悬出参数增加会导致PLCC封装焊盘和SO封装焊点的振动应力显著提升;合理的侧面长度能够明显降低PLCC封装引脚、焊点和SO封装焊盘的振动应力;填充高度增加会引起PLCC封装引脚、焊点振动应力明显变大。 The results demonstrate that the increase of overhang size would significantly increase thevibration stress in the solder pads of PLCC packages and the solder joints of SO packages． A reasonable side length cansignificantly reduce the vibration stress in the leads and solder joints of PLCC packages as well as solder pads of SO packages．Increased filler height would cause obviously larger vibration stress in the leads and solder joints of PLCC packages．
15751 证明了焊点形态参数的优化能够明显增强引脚表贴元器件振动可靠性。 In conclusion，by optimizing the morphological parameters of solder joint，the vibration reliability of the leaded surface mountcomponents can be significantly improved．
15752 GaN HEMTs作为第三代半导体器件,它的工作频率高,功率密度大,而且耐高温、高压,不仅是功放控制电路中的重要组成部分,也是毫米波时代5G无线通信电路中的理想射频功率器件。 As a third－generation semiconductor device，GaN HEMTs have high operating frequency，high power density，high temperature and high voltage resistance． They are not only the important part of power amplifier control circuit，but alsothe ideal ＲF power device in 5G wireless communication circuit in the era of millimeter－wave．
15753 基于GaN HEMTs器件的19参数小信号等效电路模型,提出了一种在冷场条件下,利用粒子群优化算法(PSO)获取器件小信号模型的外部寄生参数的方法。 Based on the 19－parametersmall－signal equivalent circuit model of GaN HEMTs，a method of obtaining external parasitic parameters of the small －signal model of GaN HEMTs by particle swarm optimization ( PSO) in cold field was proposed．
15754 最后通过对比不同尺寸GaN HEMTs器件在冷场偏置条件下的实际测量和仿真S参数验证了该方法的有效性。 Finally，the effectiveness ofthe proposed method was verified by comparing the actual measurement and simulation S parameters of GaN HEMTs withdifferent sizes in the cold field bias condition．