ID 原文 译文
15715 研究表明,由于单晶周期性势垒对隧穿电子散射导致透射电子波具有相干性,隧穿电导和TMR将随偏压振荡,且振荡的周期随铁磁电极半交换劈裂能的增大而增大。 The results show that，owing to the coherence caused by the scattering of periodic barrier on the transmittedelectron wave，the tunneling conductance and TMＲ will oscillate with the bias voltage． And the period of the oscillationincreases with half of the exchange splitting of the ferromagnetic electrodes．
15716 此外,研究结果还发现,当偏压低于100 mV时,偏压对隧穿磁阻效应的影响很小;当偏压显著增大时,隧穿电导和TMR随势垒层厚度振荡的振幅和频率均随之减小。 In addition，when the bias voltage is lower than100 mV，it has slight effect on the tunneling magnetoresistance． When the bias voltage increases significantly，the amplitudeand frequency of the TMR oscillations will both decrease
15717 ZnO压电纳米发电机是一种可在纳米尺度将机械能转换成电能的绿色能源器件,具有敏感度高、响应迅速、制备工艺简单等特点。 ZnO piezoelectric nanogenerator is a green energy device which can convert mechanical energy to electricalenergy in nano － scale，with the advantages of high sensitivity，rapid response，and easy fabrication．
15718 如何有效提高压电纳米发电机的输出性能是该领域的研究热点。 How to effectively enhance the output performance of piezoelectric nanogenerator is one of the research hotspots in this field．
15719 为了确定ZnO压电纳米发电机在构成电路系统时的输出特性,采用有限元仿真软件COMSOL Multiphysics,针对两种不同形貌的ZnO纳米线结构,建立了相应的电路系统。 In order todetermine the output characteristics of ZnO piezoelectric nanogenerator，the COMSOL Multiphysics simulation software wasemployed to establish the corresponding circuit system for two different morphologies of ZnO nanowires．
15720 在频域中,分析了振动频率、外接负载阻值、振动加速度、纳米线斜度与形貌五种因素对外接负载输出电压和功率的影响。 In frequency －domain analysis，the influences of five factors on the output voltage and power were investigated，including the vibrationalfrequency，external load resistance， vibrational acceleration， nanowire slope and morphology． Among them， thevibrational frequency and load resistance are the most significant influencing factors．
15721 结果表明:倾斜角为15°的平顶圆柱纳米线模型为最优模型结构,振动频率为400 Hz时,单根纳米线的峰值电压和峰值功率分别达到1.64 V和42.51 nW。 The results indicate that the flat－toppednanowire model with an inclination angle of 15° is the optimal model structure． Meanwhile，the peak voltage and power ofthe single nanowire can reach up to 1. 64 V and 42. 51 nW at 400 Hz，respectively．
15722 机械振动疲劳失效是影响柔性晶圆级封装芯片互连结构可靠性的关键因素之一。 Mechanical vibration fatigue failure is one of the critical factors affecting the reliability of the interconnectedstructure of flexible wafer － level packaging chips．
15723 应用埋置空气隙的柔性凸点结构进行随机振动条件下的有限元仿真分析,建立了三维有限元仿真模型,加载随机振动载荷后分析了X、Y、Z三个方向振动作用下各模态对应互连结构应力应变分布。 The embedded air － gap compliant bump structure was adopted to FEMsimulate and analyze under random vibration conditions． Three－dimensional finite element simulation model was established．After heat and vibration load were simultaneously applied，the stress and strain distribution of the interconnected structure wasanalyzed for each mode under the vibration of X，Y，and Z directions．
15724 研究结果表明,随机振动载荷条件下柔性凸点结构最大应力、应变分布位置出现在距离芯片中心最远位置处,互连结构所受应力、应变值均处于材料承受极限范围内,埋置空气隙柔性凸点结构能有效提高电子产品抗振疲劳可靠性。 The results show that the maximum stress and straindistribution of the compliant bump structure under compound load conditions appear at the farthest edge position from the chipcenter，and the stress and strain values of interconnected structure are within the material tolerance range． The anti－vibrationfatigue reliability of electronic products can be improved effectively by adopting the embedded air － gap compliant bumpstructure