ID 原文 译文
15525 结果表明:天线回波损耗及辐射方向图的实测结果与仿真结果基本吻合,在3.0～10.9 GHz频段内,除陷波频段3.3～3.6 GHz和5.15～5.825 GHz外,天线的回波损耗均在-10 dB以下,相应工作频段内有较好的辐射方向图。 The results show that the measured return loss and radiation pattern are basically consistent with the simulation results. In the 3. 0-10. 9 GHz band, the antenna return loss is smaller than -10 dB except for the two notch-bands of 3. 3-3.6 GHz and 5. 15-5. 825 GHz. Excellent radiation direction charts were obtained in operating frequency band.
15526 因此,所设计的天线性能满足超宽带通信系统应用要求。 The designed antenna is suitable for the UWB communication system.
15527 场限环终端结构可以有效提高击穿电压,因而被广泛应用于半导体功率器件。 The field limiting ring terminal structure can effectively increase the breakdown voltage, so it is widely used in semiconductor power devices.
15528 场限环中多个参数都影响PiN二极管主结的击穿能力。 The parameters of the field limiting ring could affect the breakdown capability of the main junction of the PiN diode.
15529 本文基于数值模拟软件建立PiN二极管的场限环终端仿真模型,并设计十道场限环作为终端结构。 In this paper, the simulation model of the field limiting ring terminal of the PiN diode was established, and ten rings was designed as the terminal structure.
15530 分别仿真场限环结深和漂移区掺杂浓度与主结的击穿电压的关系,得到结深和漂移区掺杂浓度与击穿电压的关系曲线。 The relationships between main junction breakdown voltage with field limiting ring junction depth and the drift region doping concentration were simulated.
15531 当漂移区掺杂浓度一定时,PiN二极管主结击穿电压随结深的增大而增大; When the doping concentration of the drift region is constant, the main junction breakdown voltage of the PiN increases with increasing of junction depth.
15532 当结深保持不变时,PiN二极管主结击穿电压随漂移区掺杂浓度的增大而减小。 When the junction depth remains the same, the main junction breakdown voltage of the PiN decreases with increasing doping concentration in the drift region.
15533 随后提取击穿时的电场分布,并分别从结表面和结曲面的峰值电场、电场分布均匀度两个方面分析击穿原理。 Then the electric field was extracted, and the peak electric field and the distribution uniformity of electric field were analyzed on the junction surface and junction curved surface, respectively. And the breakdown principle was obtained.
15534 基于密度泛函理论的第一性原理,使用GGA+U方法计算出La、C分别单掺ZnO及La-C共掺ZnO晶体的形成能、能带结构、态密度及光学性质。 The formation energy, band structure, state density and optical properties of La or C doped ZnO and La-C co-doped ZnO crystals were investigated by using the GGA+U method based on the first principle of density functiona theory .