ID 原文 译文
15505 在6 dB回退点效率高达65.2%,与传统AB类放大器相比,效率提升了18%。 The efficiency is 65. 2% at the 6 dB back-off point, which is increased by 18% compared with the traditional class AB amplifier.
15506 利用峰均功率比为10 dB、5 MHz的单载波的FDD信号在3.45 GHz频点进行线性仿真,测得在34 dBm的平均输出功率下,邻道泄漏比(ACLR)和误差向量幅度分别为-32.1 dBc和7.768%。 Linear simulation was performed using a single-carrier FDD signal with a peak-to average power ratio of 10 dB and a bandwidth of 5 MHz. Under the average output power of 34 dBm, the simulated adiacent channel leakage ratic (ACLR)and error vector magnitude(EVM)at 3. 45 GHz are -32. 65 dBc and 7. 28%,respectively.
15507 针对当前通信系统需要耦合器支持多频段、小型化和高性能等要求,提出了一种双频（DB）分支线耦合器（BLC）。 A miniaturized dual-band (DB) branch-line coupler (BLC) was proposed to meet the requirements of multi band, miniaturization and high performance for current communication system.
15508 通过在传统耦合器中间加非对称交叉耦合分支线同时实现了分支线耦合器的双频带和宽频带。非对称交叉耦合分支线的引入增加了设计的自由度。利用等效替换的方法实现耦合器的小型化。 The dual and wide band was obtained using meandered transmission line sections with broken symmetry between cross-coupling branches, which can increase design freedom. Equivalent replacement was used to realize the miniaturization of the coupler.
15509 使用SBO（Surrogate-Based Optimization）技术解决设计效率低、周期长的问题。 And SBO was used to solve the problems of low design efficiency and long cycle.
15510 经过Ansoft HFSS仿真软件优化分析,所提出的耦合器的尺寸仅有0.175λg×0.156λg,和传统单频带结构相比缩小48%。 The structure of the coupler were simulated and optimized by HFSS software. The optimized structure has small size of only 0. 175λg x0. 156)g, which is 48% smaller than conventional sinale-band structure.
15511 由仿真结果显示,该耦合器的中心频率为3.05 GHz/6.1 GHz,小于-20 dB的带宽分别为200 MHz（6.5%）和650 MHz （10.6%）。 Simulation results show that the central freauency of the coupler is 3. 05 GHz/6. 1 GHz, anc S<-20dB bandwidth of the coupler are 200 MHz(6.5%)and 650 MHz(10. 6%) respectively.
15512 对提出的耦合器进行实物加工与测试,测试结果与仿真结果较吻合,证明了设计的有效性。 The proposed structure was machined and tested. The test results were in good agreement with the simulation results, which proved the effectiveness of the design.
15513 为了精确提取磷化铟异质结双极型晶体管(InP HBT)在毫米波频段的寄生参数和本征参数,研究了器件的物理结构,从物理上区分了通孔和电极的寄生元件,建立了一个适用于毫米波频段的具有详细寄生网络的分布式InP HBT小信号模型,同时提出了一种直接的参数提取方法且不使用任何数值优化。 To accurately extract the parasitic and intrinsic parameters of indium phosphide heterojunction bipolar transistors (InP HBTs)in the millimeter-wave frequency band, the physical structure of the device was investigated, and the parasitic elements of the through-hole and electrode were physically distinguished. A distributed small-signal model with a detailed parasitic network was established for the InP HBT, which is applicable to the millimeter-wave frequency band. Meanwhile we proposed a direct parameter extraction method without using any numerical optimization.
15514 结果显示,若忽略寄生参数的影响,本征参数提取结果会被高估,且寄生电阻与寄生电感存在明显的趋肤效应。 The results show that the intrinsic parameter extraction results are overestimated if the parasitic parameters are ignored and there is a significant skin effect between parasitic resistance and inductance.