ID |
原文 |
译文 |
15215 |
基于VIS 0.4μm BCD工艺,使用Hspice进行了仿真验证。 |
Based on VIS 0. 4 μm BCD process, Hspice is used for simulation and verification. |
15216 |
仿真结果表明:电路能够将-12~12 V的电压比较得到正确的数字信号。 |
The simulation results show that the circuit can get the correct digital signal by comparing the voltage of-12 ~ 12 V. |
15217 |
在常温即25℃,TT工艺角下,迟滞门限为108.9 mV。 |
The hysteresis threshold was 108. 9 mV at room temperature( 25 ℃) and TT process corner. |
15218 |
在温度从-40℃~125℃变化时,迟滞门限电压变化小于9.16 mV,温度系数为0.055 5 mV/℃。 |
When the temperature changes from-40 ℃ to 125 ℃, the change of hysteresis threshold voltage is smaller than 9. 16 mV, the temperature coefficient is 0. 055 5 mV/℃. |
15219 |
基于Micro-Electro-Mechanical System(MEMS)工艺,采用双层谐振腔滤波结构,分析并设计了一种基于MEMS的硅基Substrate Integrated Waveguide (SIW)双通带宽带带通滤波器芯片。 |
This paper analyzes and designs a silicon based substrate integrated waveguide( SIW) dual passband broadband bandpass filter chip based on Micro-Electro-Mechanical System(MEMS) process with double layer resonant cavity filter structure. |
15220 |
设计的滤波器芯片在21.25~29 GHz以及43~47.5 GHz双通带频带内插入损耗小于3 dB,相对带宽分别为30%以及10%,带外抑制度大于20 dB,并且在双通带间产生了零点,尺寸仅为4.2 mm×1.1 mm×0.8 mm。 |
The designed filter chip has an insertion loss of less than 2 dB in the 23 ~ 29 GHz and 43 ~ 47 GHz dual passband bands with relative bandwidths of 23 % and 9 %, respectively, and an out-of-band suppression of more than 20 dB, and generates a zero point between the dual passbands with a size of only 4. 2 mm × 1. 1 mm × 0. 8 mm. |
15221 |
该滤波器是平面堆叠结构,具有体积小、频带宽、易集成等优点,有较好的应用价值。 |
The filter is a planar stacked structure, with the advantages of small size,wide band and easy integration, which has good application value. |
15222 |
时间交织型SAR ADC对包括电容失配在内的通道间失配较敏感,其中电容失配既包括通道内的失配也包括通道间的失配,是影响时间交织型SAR ADC性能的重要因素。 |
The time-interleaved SAR ADC is sensitive to mismatch between channels. The key factor is the capacitor mismatch, both in channel and between channels. |
15223 |
为了提升时间交织型SAR ADC的性能,基于对SAR ADC中DAC电容失配对时间交织型SAR ADC影响的分析,结合单通道低速工作SAR ADC的电容校正方法,提出了一套适用于时间交织型SAR ADC的电容校正方法,实现了超过9 dB的SFDR和超过2.5 dB的SNDR性能提升。 |
This paper analyzes the impacts of capacitor mismatches in DAC of SAR( Successive-Approxima-tion-Register) ADC on time-interleaved SAR ADC. For improving performance of time-interleaved SAR ADC, a calibration tech-nique based on calibration of capacitor mismatches in single low-speed SAR ADC is proposed, which results in improvement of SFDR( Spurious Free Dynamic Range) exceed 9 dB and SNDR( Signal to noise distortion ratio) exceed 2. 5 dB. |
15224 |
为了满足当前电源模块高效大功率的要求,针对氮化镓器件设计一款高频驱动电路,并搭建形成高频高效的电源模块。 |
In order to meet the high efficiency and high power requirement of current power supply module, this paper designs a high frequency drive circuit for gallium nitride device, and builds a high frequency and high efficiency power supply module. |