ID 原文 译文
15205 最后使用裸芯片以微组装的形式加工到RO4350和RO5880基板与腔体上，并完成测试。 Finally, dies are fabricated on the substrate and cavity of RO4350 and RO5880 in the form of micro assembly, and then be tested.
15206 测试结果表明，使用数学建模的方式能够得到稳定工作频率源。 The test results show that the stable working frequency source can be obtained by using mathematical modeling.
15207 辐射干扰问题是制约电源产品高频化、小型化的因素之一。基于场路耦合的仿真思路，建立MOSFET的电磁场有限元模型和高频变压器的等效高频电路模型。 Radiation interference is one of the bottlenecks that restrict the high frequency and miniaturization of power products.Based on the simulation idea of field circuit coupling, the electromagnetic field finite element model of MOSFET and the equivalent high frequency circuit model of high frequency transformer are established.
15208 结合从SIwave电磁仿真软件中提取的PCB网络参数，对一款5 W输出的反激变换器的板级辐射干扰进行联合仿真，并对比了两种高频变压器模型对远场仿真结果的影响。 Combined with the PCB network parameters extracted from SIwave, the board level radiation interference of a 5 W output flyback converter is co-simulated, and the influence of two high frequency transformer models on the far-field simulation results is compared.
15209 实验结果表明，在230 MHz以内的频段3 m远场仿真超标频点与实测吻合，验证了该仿真方法的正确性，且简化的变压器二电容模型具有更宽频带的适用性；所得到的近场电磁场分布表明MOSFET和变压器副边的整流二极管是主要的辐射源。 The experimental results show that the simulation re-sults of 3 m far-field within 230 MHz are in good agreement with the measured results, which verifies the correctness of the simu-lation method, and the simplified two capacitance model of transformer has wider applicability; the obtained near-field electromag-netic field distribution shows that MOSFET is the main source of electric field radiation, and the rectifier diode at the secondary side of transformer is the main source of magnetic field radiation.
15210 硅基射频场效应晶体管具有线性度好、驱动电路简单、开关速度快、热稳定性好、没有二次击穿等优点，在HF、 VHF和UHF波段具有广阔的应用前景。 Silicon-based radio frequency field effect transistors have the advantages of excellent linearity, simple drive circuit, fast switching speed, excellent thermal stability, no secondary breakdown, etc., and have broad application prospects in HF, VHF and UHF bands.
15211 针对射频场效应晶体管宽带、高增益和高效率的应用需求，基于标准平面MOS工艺，采用平面分栅(split gate)结构，通过优化结构和工艺参数研制出一款工作电压为28 V的硅基射频垂直双扩散金属氧化物半导体场效应晶体管(VDMOS)。 In view of the application requirements of the RF field effect transistors with broadband, high gain and high efficiency,based on the standard planar MOS process, the split gate structure was adopted and a silicon-based RF vertical double-diffused metal oxide semiconductor field effect transistor with working voltage of 28 V was developed by optimizing the structure and process parameters.
15212 该器件在30～90 MHz频段范围内，小信号增益大于19 dB，在60 MHz频点下连续波输出功率可以达到87 W，功率附加效率达72.4%，具有优异的射频性能。 In the frequency range from 30 MHz to 90 MHz, the device can achieve small signal gain greater than 19 dB, the contin-uous wave output power can reach 87 W at the frequency of 60 MHz, the power added efficiency up to 72. 4 %, has excellent radio frequency performance.
15213 为了将CAN(Controller Area Network)总线上的-12～12 V的信号转化为0～5 V的串行数字信号，设计了一种应用于CAN收发器的宽输入范围的迟滞比较器。 A hysteresis comparator with wide input range for Controller Area Network( CAN) transceiver is designed to convert the-12 ～ 12 V signals on CAN bus into 0 ～ 5 V serial digital signals.
15214 实现的方案是先使用电阻将电源和总线上的信号线性叠加得到5 V电压内的信号，再使用全差分放大器进行钳位，使用共模反馈稳定共模工作点，最后使用对尾电流进行温度补偿的内部正反馈的迟滞比较器比较得到数字信号。 The solution is to use resistance to linearly superimpose the sig-nals on the power supply and bus to get the signals in the 5 V voltage, then use full differential amplifier to clamp, use common mode feedback to stabilize the common mode working point, and finally use the internal positive feedback hysteresis comparator that can compensate the temperature of the tail current to get the digital signal.