| ID | 原文 | 译文 |
| 12664 | 同时，该器件的循环擦/写次数可达10 000次，在25 m的 “开/关”态应力条件下寿命大于10年，抗总剂量能力可达150 krad (Si)以上。 | Meanwhile，the erasing/writing cycles of the device can reach 10 000. The lifetime of the device is more than 10 years under the on/off states stress condition at 2$ C, and the ability of TID radiation can reach above 150 krad (Si). |
| 12665 | 采用滴涂法将C^ZnSnS" (CZTS)纳米墨水制成薄膜，研究了退火工艺对薄膜性能的影响。 | The C^ZnSnS" (CZTS) nano-ink was used to prepare the thin film by drop-coating method, and the influence of the annealing process on properties of the thin film was studied. |
| 12666 | 首先，采用乙醇作为溶剂、三乙醇胺作为分散剂，将微波液相合成的水性CZTS纳米颗粒配成纳米墨水，并采用滴涂法将纳米墨水制成CZTS薄膜。 | Firstly, the hydrophilic CZTS nanoparticles synthesized by the microwave liquid phase were formulated into nanonk by using ethanol as the solvent and triethanolamine as the dispersant. Then the nano-ink was used to prepare CZTS thin film by drop-coating method. |
| 12667 | 其次，为了提高薄膜的结晶性，将制备的CZTS薄膜在氮气气氛下进行退火处理，研究了退火温度与退火时间对薄膜形貌、成分及物相结构的影响。 | In order to improve crystallinity of the as-synthesised CZTS thin film，the CZTS thin film was annealed in nitrogen atmosphere，and the influences of annealing temperature and annealing time on the morphology，composition and phase structure of the thin film were investigated. |
| 12668 | 研究结果表明，随着退火时间的延长，薄膜中的C+2一・S杂相逐渐消失，薄膜的结晶性和致密性逐渐提高。 | The research results show that the Cu)一,S impurity phase in the thin film gradually disappears， and crystallinity and compactness of the thin film are improved with the increase of the annealing time. |
| 12669 | 随着退火温度的增加，薄膜的结晶性与致密性也有所提高。 | Moreover, crystallinity and compactness of the thin film are also improved with the increase of the annealing temperature. |
| 12670 | 在500°下退火30 min，所制备的CZTS薄膜不存在杂质相，且表面较为均匀致密。 | The as-synthesised CZTS thin film has no impurity phase when being annealed at 500 °C for 30 min，and the surface is uniform and compact. |
| 12671 | 智能剥离技术是制备绝缘体上错（GeOI）衬底的常用方法。 | The smart-cut technique is a common method for preparing germanium-on^nsulator (GeOI) substrate. |
| 12672 | 然而，由于错与硅之间 的热膨胀系数相差较大，硅错键合界面较大的热应力可能导致键合对裂片或者解键合。 | However， due to the large thermal expansion coefficient between germanium and silicon， the large thermal stress on the silicon-germanium bonding interface may result in the crack or debonding of the bonding pair. |
| 12673 | 通过对硅错异质键合对的热应カ问题进行理论分析，建立了硅错双平板热应力模型。 | Based on the theoretical analysis of the thermal stress problems of silicongermanium heterogeneous bonding pairs，a silicon germanium bi-layer thermal stress model was established. |