ID 原文 译文
12654 金包银复合键合丝具有较高的抗拉强度(230 MPa) 和延伸率(15%)，其强化机制为界面强化和细晶强化，其电性能受表面/界面以及晶界散射的影响而变差。 The breaking strength (230 MPa) and elongation (15%) of the gold-coated silver composite bonding wire are high. Its strengthening mechanism is interface strengthening and fine-grain strengthening， and its electrical properties are degraded by surface / interface and grain boundary scattering.
12655 金包银复合键合线弧形稳定，具有较高的键合可靠性，其挑断カ(7.79g)与焊球 推力(49.7g)均满足微电子封装技术对键合丝的品质要求。 The gold-coated silver composite bonding wire has stable arc shape with high bonding reliability. The wire pulling force ( 7. 79g) and solder ball thrust force ( 49. 7g) can meet the quality requirement of the bonding wire for microelectronic packaging technology.
12656 基于$017年11月$6日至$018年5月31日海上平台采集的气象数据!结合海气边界层耦合 海洋-大气响应试验算法，引入稳定条件下发展的普适函数，计算了动量通量、感热通量、潜热通量、蒸发波导高度，并对海气界面通量与蒸发波导高度的相关性进行分析。 Based on the meteorological data collected from the offshore platform from November $6, $017 to May 31, $018, the momentum flux, sensible heat flux, latent heat flux and evaporation duct height were calculated using coupled ocean-atmosphere response experiment algorithm in sea air boundary layer in which the universal functons developed under the stable condition were introduced. And the correlation between air sea interface flux and evaporation duct height was analyzed.
12657 结果表明：动量通量位于ー0.5〜0 N/m$，感热通量位于ー10〜5 W/m$，潜热通量位于0〜300 W/m$，蒸发波导高度位于0〜$5 m%。 The results show that the momentum lux is in the range of - 0. 5—0 N/m$ , the sensible heat flux i s in the range of -10—5 W/m$ , the latent heat flux is in the range of 0—300 W/m$ , and the evaporaton duct height is in the range of 0— $5 m.
12658 蒸发波导高度与潜热通量的相关系数在稳定条件下为0.73，在中性条件下为0.93，在不稳定条件下为0.95。 The correlaton coeffcent between evaporaton duct heght and latent heat flux Ms 0.73 under stable condton, 0.93 under neutral condton and 0. 95 under unstable condition.
12659 这些分析结果可为揭示海上不同大气条件下的蒸发波导形成机理提供有力支撑。 These results provide a support for revealing the formaton mechansm of evaporation duct under different atmospheric conditions.
12660 基于90 nm eFLASHエ艺设计并制备了一种新型抗辐照Push-Pull型pFLASH开关单元，并对其特性进行了研究。该结构由2个2T-FLASH管(T1)和1个信号传输PMOS管 (T3)组成，采用带带隧穿(BTBT)编程方式和福勒ー诺德海姆(FN)擦除方式实现其“开/ 关”态功能。 A new type of radiation-hardened Push-Pull pFLASH switch cell which includes two 2T- FLASH transistors (T1/T2) and a signal transmission PMOS transistor (T3) was designed and prepared based on 90 nm eFLASH process technology and its performance was studied. The on/off states function was realized by using the band-to-band tunneling (BTBT) programming mode and Fowler-Nordheim (FN) erasing mode.
12661 同时，对其“开/关”态特性进行表征，研究其耐久性和电荷保持特性，最后，对其抗总剂量(TID)能力进行评估。 Meanwhile，the "on/off" states characteristics were characterized to study the endurance and retention of the pFLASH switch cell device. Finally, its resistance to total ionizing dose (TID) ability was evaluated.
12662 实验结果表明：该器件的“L编程-T2擦除”与“L擦除- T2编程”态均可以实现信号传输管的“开/关”态功能，其阈值窗口的均值约为10.5 V。 The experimental results show that “T1_PGM-T2—ERS( and “T1_ERS-T2_ PGM ( states of the device can achieve the on/off states function of the signal transmission transistor. The average threshold windows of T[/T, transistors are approximately 10. 5 V.
12663 在工作电压为-1.2V条件下，Th管的“开”态驱动电流均值约为0.92 mA “关”态漏电流低于 40 pA，且均表现出了良好的一致性。 Under -1.2 V working voltage，the average driving current of the T3 transistor at on state is about 0. 92 mA，and the leakage current of T3 at “off state is below 40 pA，which shows a good uniformity.