| ID | 原文 | 译文 |
| 12644 | 而基于芬顿反应的硅溶胶抛光液Zeta电位绝对值为9.88 mV，稳定性极差，抛光后 的SiC表面出现大量划痕并伴有晶体剥落，表面粗糙度达到3.666 4 nm。 | However, the absolute value of Zeta potential of the colloidal silica polishing solution based on Fenton reaction is 9. 88 mV with poor stability. The polished SiC surface has many deep scratches and crystals spalling, and the surface roughness is 3. 666 4 nm. |
| 12645 | 在图形化蓝宝石衬底上制备了 InGaN/AlGaN近紫外发光二极管(LED) 采用金属有机化学气相沉积(MOCVD)方法外延生长了不同厚度的AlN成核层，系统研究了 AlN成核层厚度对外延层质量和InGaN/AlGaN近紫外LED (波长395 nm)光电性能的影响。 | InGaN/AlGaN near-ultraviolet (UV) light-emitting diodes (LEDs) were grown on patterned sapphire substrate. The AlN nucleation layers of different thicknesses were grown by the metal organic chemical vapor deposition (MOCVD) method. The effects of the thickness of AlN nucleation layer on the quality of the epitaxial layer and the photoelectric properties of InGaN / AlGaN near-UV LEDs (with a wavelength of 395 nm) were investigated systematically. |
| 12646 | 使用透射电子显微镜对外延层的截面结构及位错进行表征。 | The cross-section structure and dislocation of the epitaxial layer were characterized by the transmission electron microscope. |
| 12647 | 结果表明，随着AlN成核层厚度的增加，位错密度不断减小，且量子阱表面V形坑尺寸逐渐减小。 | The results show that the dislocation density and the size of the V-shaped pit on the quantum well surface decrease with the increase of AlN nucleation layer thickness. |
| 12648 | LED器件的光学性能和电学性能随着V形坑尺寸的减小而提高，归一化外量子效率最大值由0.55增至1。 | The optical and electrical properties of LED devices are improved with the decrease of the V-shaped pit size, and the maximum value of the normalized external quantum efficiency increases from 0. 55 to 1. |
| 12649 | 在电流350 mA时，正向电压从 3.54 V降至3.45 V，又升高至3.60 V，当AlN成核层厚度超过临界值后，位错密度不降反升，量子阱表面的V形坑密度增加，导致量子阱的有效发光面积减小，外延层质量下降。 | The forward voltage at 350 mA drops from 3. 54 V to 3. 45 V initially，and then rises to 3. 60 V. When the thickness of the AlN nucleation layer exceeds the critical value，the dislocation density and the V-shaped pit density on the quantum well surface increase，which leads to a decrease of the effective luminescence area and a decrease in the quality of the epitaxial layer. |
| 12650 | InGaN/ AlGaN近紫外LED的光电性能与AlN成核层厚度密切相关，最佳AlN成核层厚度为50.22 nm。 | The photoelectric properties of InGaN/AlGaN near-UV LEDs are closely related to the AlN nucleation layer thickness, and the best AlN nucleation layer thickness is 50.22 nm. |
| 12651 | 采用固相复合及大塑性拉拔技术制备了线径0.020 mm的金包银复合键合丝，并利用扫描电子显微镜、双束电子显微镜、单轴拉伸实验、电阻率实验、键合实验、线弧挑断实验及焊球推力实验等对其微结构和性能进行表征。 | The gold-coated silver composite bonding wire with a wire diameter of 0. 020 mm was prepared by solid-phase composition and severe plastic deformation technology. And its microstructure and property were characterized by scanning electron microscope， double beam electron microscope，uniaxial tensile test，resistivity test，bonding test，wire pulling force test and solder ball thrust force test，etc. |
| 12652 | 结果表明：金包银复合键合丝的复层达到纳米级尺度，在芯材表面均匀连续覆盖，与芯材的界面结合力好。 | The results show that the composite layer of the gold-coated silver composite bonding wire reaches nanometer scale，and covers the core material surface uniformly and continuously. The interfacial bonding force between composite layer and core is good. |
| 12653 | 芯材横截面组织为等轴晶，晶粒细小弥散且内部有大量的板条状平行的退火挛晶。 | The cross-section structure of the core material is equiaxed grain. The grain is fine and dispersed with a large number of parallel annealing twins in strip shape inside. |