ID 原文 译文
12634 同时文中也指出了大气波导对电子信息系统是有利有弊的，在大气波导应用方面要“扬长避短”，在对大气波导规律研究透彻的基础上，给出利用方案和防范方案，更好地为人类服务。 At the same time, this paper also points out that the atmospheric duct has advantages and disadvantages for electronic information system, so we should) make good use of its advantages and avoid the disadvantages" in the application of atmospherc duct. On the basis of thorough research on the law of atmospherc duct, the utilization scheme and preventon scheme are gven to better serve human beings.
12635 基于CSMC 0. 18 xmエ艺，设计了一款全CMOS结构的带隙基准源电路。 An all-CMOS-structure band-gap reference circuit based on CSMC 0. 18 |xm process was designed.
12636 电路正常工作时，所有MOS管均处于亚阈工作状态，从而保证了整个带隙基准电路芯片具有极低的功耗。 When the circuit was working normally，all MOSFETs of the proposed circuit were in the subthreshold working status， thus ensuing extremely low power consumption of the bandgap reference circuit chip.
12637 在电压输出方面，通过分压降低负温度系数（CTAT）电压同时降低相应的正温度系数（PTAT） 电压，使输出电压小于1V。 In terms of the voltage output, the complementary proportional to absolute temperature (CTAT) voltage was reduced by dividing the voltage while lowering the corresponding proportional to the absolute temperature ( PTAT) voltage, so that the output voltage was less than 1 V.
12638 在温度系数方面，通过对CTAT电压进行分压降低负温度系数，配合级联PTAT电路，使温度系数能够精确可调。 In terms of the temperature coefficient，the negative temperature coefficient was reduced by dividing the CTAT.
12639 再经由PTAT电压调整管，极大改善了输出温度特性，得到较低的温度系数。 And the cascaded PTAT circuit was coordinated to make the temperature coefficient accurately adjustable.
12640 后仿真结果表明该基准输出电压为495 mV，整体工作电流仅为 8 nA，温度系数为4.86x10-6，工作温度为ー50~150°C。 The post-simulation results show that the output reference voltage of the bandgap reference is 495 mV，the overall operating current is only 8 nA，the temperature coefficient is 4. 86x10 ，and the operating temperature range is -50 -150 C .
12641 该设计应用于低压差线性稳压器芯片中，芯片测试结果表明其性能良好。 The design was applied to a low dropout linear regulator chip，and the chip test results show that its performance is good.
12642 通过在碱性硅溶胶中添加不同的芬顿试剂配制成不同的硅溶胶抛光液，检测其Zeta 电位绝对值的大小，研究不同芬顿反应试剂对硅溶胶稳定性的影响，进而探究其稳定性对SiC化学机械抛光的影响。 By adding different Fenton reagents in the alkaline colloidal silica to prepare different colloidal silica polishing solutions，the absolute value of Zeta potential was detected，the effect of different Fenton reaction reagents on the stability of the colloidal silica was studied，and the effect of its stability on SiC chemical mechanical polishing was investigated.
12643 实验结果表明，原硅溶胶和加入H2O2的硅溶胶抛光液Zeta电位绝对值分别 为45和55.5 mV，稳定性好，抛光后的SiC表面形貌也最好，表面粗糙度分别达到0.500 6和 0.464 2 nm; The experimental results show that the Zeta potential absolute values of the original colloidal silica and colloidal silica polishing solution containing H2 O2 are 45 and 55. 5 mV, respectively, indicating the good stability. Besides, the polished SiC has the best surface morphology, and the surface roughness reach 0. 500 6 and 0. 464 2 nm，respectively.