ID 原文 译文
12534 TGM 与 RCM 相结合用于复杂金属屏蔽腔体电磁脉冲耦合效应的研究，可以简化原有 RCM 的繁琐过程。 Time gating method combined with the random coupling model can simplify the cumbersome process of the original random couplingmodel for the study of electromagnetic pulse coupling effects in complex metal shielding cavities.
12535 利用电波环境观测网中低纬地区（以满洲里、重庆、昆明、海口为例）电离层 foE 数据，参照前人工作，分析了 foE 月中值与太阳活动指数、太阳天顶角的变化关系，建立了我国中低纬多个地区的 foE 月中值经验模型。 This article analyses middle and low latitudes (Manzhouli, Chongqing, Kunming and Haikou) foE datafrom radio environmental observation network. Consulting other researchers’ work, we achieve the relationshipbetween the foE median monthly value and solar activity F10.7 index and solar zenith angle. The empirical model used inmiddle and low latitudes of China with the input of F F10.7 and solar zenith angle is established.
12536 结果表明：foE 月中值与 F10.7 存在很强的相关性（相关系数大于 0.9）；与正午太阳天顶角余弦存在反相关性 (相关系数绝对值大于 0.7)；与实测数据对比发现本文模型计算值标准偏差小于 0.1 MHz，优于国际参考电离层(international reference ionosphere, IRI) 模型。 The results show that thereis a positive correlation between the median monthly value of foE and F10.7(correlation coefficient above 0.9), and negativecorrelation between the median monthly value of foE and the cosine of solar zenith angle at noon(correlation coefficientabove 0.7). Compared with the measured data, it is found that the error standard deviation of the empirical model of foE isless than 0.1 MHz and is better than the international reference ionosphere(IRI).
12537 本文研究对于 IRI 模型改进与我国区域电离层经验模型研究建立具有重要意义。 This study is of great siginificance to theimprovement of IRI model and the establishment of autonomous ionospheric foE empirical model in China.
12538 考虑到芯片实际应用环境的复杂性，针对体硅 (silicon, Si) 和绝缘体上硅 (silicon on insulator,SOI) 两种工艺的静态随机存储器 (static random-access memory, SRAM)，测试研究温度效应分别对这两种不同工艺存储器芯片敏感度的影响。 Considering the complexity of the practical application environment of the chip, the effects oftemperature on the sensitivity of static random access memory (SRAM) chips with bulk silicon (Si) and silicon oninsulator (SOI) technologies were tested and studied.
12539 依据两种工艺下金属氧化物半导体 (metal oxide semiconductor, MOS) 器件结构的异同，对两种工艺下 MOS 器件的温度效应进行了对比分析；结合温箱和直接功率注入法 (direct power injection，DPI) 的测试设备 ，搭建了一个可用于评估温度和电磁干扰 (electromagnetic interference, EMI) 共同作用到SRAM 的测试平台。 According to the similarities and differences of metal oxidesemiconductor (MOS) devices under two technologies, the temperature effects of MOS devices under two technologieswere compared and analyzed. A testing platform was built to evaluate the effect of temperature and electromagnetic interference (EMI) on SRAM by combining the temperature chamber and direct power injection (DPI) method test equipment.
12540 通过理论与试验研究发现随着温度的升高，两款不同工艺的 SRAM 存储器芯片敏感度阈值都会增加，且在 100 MHz 之后 SOI 工艺的敏感度阈值增加普遍大于体 Si 工艺，这对于 SOI 和体 Si 工艺集成电路在高低温环境下电磁兼容性的研究具有一定意义。 Through theoretical and experimental research, it is found that the sensitivity thresholds of SRAM memorychips of different technologies will increase with the increase of temperature, and the sensitivity threshold of SOI technology after 100 MHz is generally larger than that of Si technology, which has certain significance for the study of electromagnetic compatibility of SOI and Si technologies integrated circuits in high and low temperature environments.
12541 针对雷电过程在地面产生的近区极低频电磁脉冲，推导出了双指数模型激励下垂直电偶极子产生的极低频电磁场的瞬态近似表达式。 In the present study, the transient approximate formulas for ELF electromagnetic field excited by adouble exponential function are derived due to a vertical electric dipole on the ground at near distances representing alightning discharge process.
12542 该方案基于 Sommerfeld 积分在准静态近似下求解，从频域出发，利用单位脉冲响应的近似结果与双指数模型激励源卷积计算的方法，通过傅里叶逆变换，得到了双指数源激励下的瞬态解析表达式，其可用于模拟雷电信号产生的极低频电磁脉冲在空间传播的时频响应特性。 The approximate solution is obtained from simplifying the Sommerfeld’s integrals with thequasi-static approximation. The computational scheme, simulating the characteristics of time- and frequency-responsesfor ELF wave representing the lightning pulse signals, exploits the results of an approximate unit impulse response fromfrequency domain and convolution of which with a double exponential exciting function, and provides with theanalytical transient expression of the ELF waves from the inverse-Fourier-transformation.
12543 本文模型为雷电过程中近区产生的电磁干扰等问题的研究提供了一种简单且有效的估算方法。 The study illustrates a simple but effective estimation for the lightning pulses in the near region in the application of electromagnetic compatibility systems.