ID 原文 译文
12484 采用喇曼光谱仪对GaN的应力进行了表征, GaN的喇曼E2 (h) 峰位于567.02 cm-1, 表面受到的张应力为0.170 6 GPa, 由于GaN外延层受到的张应力很小, 说明插入多层AlGaN后应力已经释放。 The stress of GaN was characterized by Raman spectrometer. The Raman E2 ( h) peak of GaN is 567. 02 cm-1, and the surface tensile stress is 0. 170 6 GPa. The very small tensile stress of GaN epitaxial layer indicates that the stress of GaN epilayer is released with the insertion of AlGaN multilayers.
12485 汞探针C-V测试二维电子气浓度较Hall测试结果偏低, 可能是在C-V测试时肖特基势垒接触会降低载流子浓度。 The two-dimensional electron gas concentration obtained by Hg-probe C-V measurement is lower than that by the Hall measure-ment, which may be caused by the reduction of carrier concentration due to the Schottky barrier contact in the C-V measurement.
12486 为了更好地解决大功率三维系统封装 (3D-SIP) 芯片散热的问题, 将分形理论和翅片型微通道相结合, 应用于微米级的微通道布局中, 形成新型的平行翅片型微通道、交错翅片型微通道、树状翅片型微通道3种布局。 In order to better solve the heat dissipation problem of high power 3D system in package ( 3D-SIP) , the fractal theory and fin-type micro-channel were combined and applied to the design of micron level micro-channel layout in this work, and three types of micro-channel layouts such as parallel fintype micro-channel layout, stagger fin-type micro-channel layout and tree fin-type micro-channel layout were formed.
12487 在ANSYS的FLOTRAN中建立了相应模型, 得到了大功率芯片结温、芯片温差和3D-SIP的热阻, 比较了3种微通道布局对大功率3D-SIP散热特性的影响。 Based on the FLOTRAN in ANSYS, the corresponding models for the different layouts were established to simulate the junction temperature of high power chip, the chip temperature difference and thermal resistance of 3D-SIP. In addition, the effects of the three new micro-channel layouts on the heat dissipation characteristics of 3D-SIP were compared.
12488 研究结果表明, 相比其他两种微通道布局, 树状翅片型微通道布局使3D-SIP的大功率芯片散热效果最好, 为大功率3D-SIP的散热设计提供了很好的参考依据。 The results show that tree fin-type micro-channel layout can help the high power chips of 3D-SIP dissipate heat more efficiently comparing with the other two micro-channel layouts, which provides a useful method for high power 3D-SIP heat dissipation design.
12489 研究了不同偏置条件下国产商用pnp型双极晶体管在宽总剂量范围内的辐射损伤特性和变化规律。 The radiation damage characteristics and variation rules of domestic commercial pnp bipolar transistor in a wide range of total dose were investigated under different bias conditions.
12490 实验结果表明, 在100 rad (Si) /s和0.01 rad (Si) /s剂量率辐照下, 总累计剂量达到200 krad (Si) 时, 这一宽总剂量范围内辐射损伤趋势均随着总剂量值不断累积而增大, 且并未出现饱和。 The experimental results show that the radiation damage increases with the dose accumulation at 100 rad ( Si) /s and 0. 01 rad ( Si) /s dose rate in a wide range of total dose, and there is no saturation until the total ionizing dose of 200 krad ( Si) .
12491 相同剂量率辐照下, 发射结施加反偏状态时国产商用pnp双极晶体管的过剩基极电流变化最大, 正偏下最小, 零偏介于二者之间。 Under the same dose rate, the variations of the excess base current is larger at reverse bias for base-emitter junction, smaller under forward bias and moderate under zero bias.
12492 两款晶体管均表现出明显的低剂量率损伤增强效应 (ELDRS) , 且在反偏下ELDRS更显著。 Both the two types of transistors exhibit enhanced low dose rate sensitivity ( ELDRS) obviously and the ELDRS is more significant at reverse bias.
12493 并对出现这一实验结果的损伤机理进行了探讨。 Additionally, the damage mechanism of the experimental results was discussed.