ID 原文 译文
12474 该滤波器结构形式新颖, 可以整体集成到硅基板中, 为射频系统级封装一体化集成提供支持。 The designed filter has a novel structure and can be integrated into the silicon substrate to support the integration of RF-SIP.
12475 制备并研究了纳米级图形化蓝宝石衬底。 Nanopatterned sapphire substrate was prepared and investigated.
12476 采用磁控溅射技术在蓝宝石衬底上沉积SiO2薄膜, 利用自组装方法在SiO2薄膜上制备单层聚苯乙烯 (PS) 胶体球阵列, 利用感应耦合等离子体干法刻蚀将周期性PS胶体球的图形转移到SiO2薄膜上, 通过湿法腐蚀制备了纳米级图形化蓝宝石衬底。 First, SiO2 thin films were deposited on sapphire substrate by magnetron sputtering. Then, the monolayer polystyrene ( PS) colloidal spheres array was prepared on the SiO2 film by the self-assembly method. The periodic patterns of PS colloidal spheres were transferred to the SiO2 film by inductively coupled plasma dry etching, and finally the nanopatterned sapphire substrate was obtained by wet etching with SiO2 hard mask.
12477 利用扫描电子显微镜对胶体球掩膜、SiO2纳米柱掩膜和图形化蓝宝石衬底结构进行了观察, 研究了湿法腐蚀蓝宝石衬底的中间产物对刻蚀的影响, 分析了腐蚀温度和腐蚀时间对蓝宝石衬底的影响。 The structures of the colloidal sphere mask, the SiO2 nanorod mask and the patterned sapphire substrate were examined by the scanning electron microscope. The effect of intermediate products by wet etching of the sapphire substrate was studied, and the effects of etching temperatures and etching time on sapphire substrates were analyzed.
12478 结果表明, 湿法腐蚀的中间产物会降低蓝宝石衬底的刻蚀速率。 The research results show that the intermediate products by wet etching can reduce the etching rate of the sapphire substrate.
12479 蓝宝石衬底的腐蚀速率随着腐蚀温度的升高而加快; The etching rate of the sapphire substrate increases with the increase of etching temperature.
12480 在同一腐蚀温度下, 随着腐蚀时间的增加, 图形尺寸进一步减小。 At the same etching temperature, the pattern size decreases with the increase of the etching time.
12481 采用金属有机物化学气相沉积 (MOCVD) 方法, 在6英寸 (1英寸=2.54 cm) Si (111) 衬底上, 使用多层不同Al摩尔组分的AlGaN插入层技术, 成功生长出厚度为2.9μm无裂纹 (扣除边缘2 mm) 的GaN外延层, 解决了大尺寸外延片的翘曲度问题, 并在此基础上生长了全结构的高电子迁移率晶体管 (HEMT) 外延片。 Based on the metal organic chemical vapor deposition ( MOCVD) method, a 2. 9 μmthick crack-free GaN epitaxial layer ( excluding the region within 2 mm away from the edge) on the 6-inch ( 1 inch = 2. 54 cm) Si ( 111) substrate was successfully grown by inserting multilayer AlGaN layers with different Al mole fraction, solving the warp problem of large-size epitaxial wafer. In addition, the whole epitaxial structure of high electron mobility transistor ( HEMT) was also grown.
12482 采用X射线双晶衍射对外延材料结构进行了表征。 And the structure of the epitaxial material was characterized by double crystal X-ray diffraction.
12483 Hall测试结果表明, HEMT外延材料的迁移率为2 080 cm2/ (V·s) , 方块电阻为279.8Ω/, 电荷面密度为1.07×1013cm-2。 The Hall measurement results show that the electron mobility and the surface charge density of the HEMT structure are 2 080 cm2/ ( V·s) and 1. 07 × 1013 cm-2, respectively, resulting in the sheet resistance of 279. 8 Ω/□.