ID 原文 译文
12464 测试结果显示，应用DICE加固的存储单元电路在99.8 MeV·cm2·mg-1的线性能量转移 (LET) 阈值下未发生翻转，非加固存储单元电路在37.6 MeV·cm2·mg-1和99.8 MeV·cm2·mg-1两个LET阈值下测试均发生了翻转，试验中两个版本的基本单元均未发生闩锁。 The test results show that the storage cell circuit hardened by DICE does not flip at the linear energy transfer ( LET) threshold of 99. 8 MeV·cm2·mg-1. On the other hand, the unhardened storage unit flips many times at the LET threshold of 37. 6 MeV·cm2·mg-1 and 99. 8 MeV·cm2·mg-1. During the test experiment no latches happended in the basic units of both of the DFFs.
12465 结果证明，基于SOI CMOS工艺的抗辐射加固设计 (RHBD) 可以显著提升存储单元电路的抗单粒子翻转能力。 The results prove that the radiation hardened design based on SOI CMOS process can significantly improve the anti-single event upset ability of the storage unit circuit.
12466 基于GaN横向肖特基势垒二极管 (SBD) 的频率特性和应用的需要，设计了一种基于AlGaN/GaN异质结的横向SBD。 Based on the frequency characteristics and application requirements of GaN lateral Schottky barrier diodes ( SBDs) , a lateral SBD based on AlGaN/GaN heterojunction was designed.
12467 利用Silvaco Atlas软件研究了AlGaN势垒层的厚度和Al摩尔组分对异质结AlxGaN1-x/GaN SBD电学性能的影响。 The influences of AlGaN layer thickness and Al mole fraction on the electrical characteristics of the AlxGaN1-x/GaN SBDs were studied based on Silvaco Atlas software.
12468 仿真结果表明, SBD器件截止频率随Al摩尔组分的增加先增大再减小, 当AlxGaN1-x层中Al摩尔组分为0.20.25, 其厚度为2030 nm时, AlGaN/GaN SBD器件的频率特性最好。 The simulation results show that the cutoff frequency of the SBDs devices increases firstly and then decreases with the increase of the Al mole fraction. When the Al mole fraction is 0. 2-0. 25 and the AlGaN layer thickness is 20-30 nm, the AlGaN/GaN SBD devices exhibit optimal frequency characteristics.
12469 在仿真的基础上, 设计制作出了肖特基接触直径为2μm的非凹槽和凹槽型AlGaN/GaN横向空气桥SBD。 Based on the simulation results, nonrecessed and recessed AlGaN/GaN lateral SBDs with air-bridge were designed and fabricated, in which the Schottky contact diameter was 2 μm.
12470 通过直流I-V测试和射频S参数测试, 提取了两种SBD器件的理想因子、串联电阻、结电容、截止频率和品质因子等关键参数, 该平面SBD可应用于片上集成和混合集成的太赫兹电路的设计与制造。 With the DC I-V and RF S-parameter measurements, the key parameters of the two types of SBDs were extracted, such as ideal factor, series resistance, junction capacitance, cutoff frequency and quality factor. The planar SBDs can be used in the design and manufacture of on-chip or hybrid integrated terahertz circuits.
12471 将无源器件内埋或集成在封装基板中, 是射频系统级封装 (SIP) 的小型化面临的首要问题之一。 Embedding or integrating the passive devices into the package substrates is one of the key issues for the miniaturization of RF system in package ( SIP) .
12472 基于硅基集成无源器件 (IPD) 技术, 借鉴经典的级联四角元件 (CQ) 滤波器拓扑, 提出一种四电感互耦结构。 Based on the silicon integrated passive device ( IPD) technology, a 4-inductor mutual coupling structure was proposed by following the classic cascaded quadruplet ( CQ) filter topology.
12473 利用集总LC谐振器和分布式互感耦合原理, 在交叉耦合节点处以加载电容的方式引入频变耦合节点, 实现了一款新颖的S波段四阶带通滤波器, 尺寸仅为1.5 mm×1 mm, 其通带内最小插损约为-3.5 dB@2.8 GHz, -1 dB带宽为2.632.96 GHz, 在带外形成两个传输零点位置:-41.5 dB@2.29 GHz和-26 dB@3.34 GHz。 With the lumped LC resonator and distributed mutual coupling principle, a frequency-dependent coupling node was formed by loading a capacitor at the cross-coupled node. Finally a novel S-band 4-order bandpass filter with the size of 1. 5 mm × 1 mm was achieved. The measured minimum insert loss in the passband is about -3. 5 dB@ 2. 8 GHz and the -1 dB bandwidth in the passband is 2. 63-2. 96 GHz. The locations of transmission zeros are -41. 5 dB@ 2. 29 GHz and -26 dB@ 3. 34 GHz.