ID 原文 译文
12454 识别缺陷、分析失效机理对TSV三维集成器件的设计、生产和使用等各环节的优化和改进具有重要作用。 Identifying defects and analyzing the failure mechanism play an important role in the optimization and improvement of the design, production and application of TSV 3D integrated devices.
12455 对不同形状、不同深宽比的TSV通孔边界层进行了微观物理分析, 对通孔形状、边界层均匀性等方面进行了评价, 分析了各种工艺缺陷形成的物理机制以及可能带来的失效影响。 The microscopic physical analysis of boundary layers of TSV with different shapes and aspect ratios were carried out. The via shapes and uniformity of boundary layers were evaluated. In addition, the physical mechanism of the formation of various process defects and the possible failure impact were analyzed.
12456 最后根据其产生的原因提出了相应的改进措施。 Finally, the corresponding improvement measures are put forward according to the failure reasons.
12457 金属氧化物薄膜晶体管(MOTFT)因具有迁移率高、可见光透明、工艺简单、可低温制备等优势，在高性能平板显示、可穿戴柔性电子、集成传感器等领域具有广阔的应用前景。 Due to the advantages of high mobility，visible light transparency，simple process andlow temperature preparation，the metal-oxide thin-film transistor ( MOTFT) is a very promising device inthe fields of high-performance flat panel display，wearable flexible electronics and integrated sensor，etc．
12458 主要回顾了溶液法制备MOTFT的研究进展。 The research progress of MOTFTs prepared by solution method is reviewed.
12459 首先介绍了溶液法制备MOTFT相对于其他方法的优势，如工艺简单、制作成本低、易掺杂；然后阐述了浸涂法、喷雾法、旋涂法、印刷法加工工艺的特点及优缺点,比较了不同溶液加工工艺所制备MOTFT的电学性能；最后指出了目前溶液法制备MOTFT存在的问题，并从有源层材料与结构、栅介质层材料与界面、退火与预处理3个方面详细地讨论了溶液法制备的优化方法。 Firstly，the advantages of solution method to prepare MOTFTs compared with other methods are described，such as simple craft，lowcost and easy doping． Then，the characteristics，advantages and disadvantages of dip coating，spraying，spin coating and printing process of MOTFTs are discussed． Furthermore，the electrical properties ofMOTFTs prepared by using different solution processing techniques are compared． Finally，the existingproblems of MOTFT prepared by solution method are pointed out，and the optimization methods for solution preparation of MOTFTs are discussed in detail from three aspects of active layer material and structure，gate dielectric layer material and interface，annealing and pretreatment．
12460 基于130 nm部分耗尽绝缘体上硅 (SOI) CMOS工艺, 设计并开发了一款标准单元库。 A standard cell library was designed and developed based on 130 nm partially depleted silicon on insulator ( PD-SOI) CMOS process.
12461 研究了单粒子效应并对标准单元库中存储单元电路进行了抗单粒子辐射的加固设计。 The single event effects was studied, and the storage cell circuit in the standard cell library was designed for single event radiation hardening.
12462 提出了一种基于三模冗余 (TMR) 的改进的抗辐射加固技术，可以同时验证非加固与加固单元的翻转情况并定位翻转单元位置。 An improved radiation hardened technique based on triple modular redundancy ( TMR) was proposed, which can simultaneously verify the upset of hardened and unhardened storage cell circuit and locate the position of the upset unit.
12463 对双互锁存储单元 (DICE) 加固、非加固存储单元电路进行了性能及抗辐射能力的测试对比。 The performance and anti-radiation ability of storage cell circuits unhardened and hardened by dual interlocked storage cell ( DICE) were tested and compared.