ID 原文 译文
12444 结果表明，顶层BGA无论浸蘸助焊剂还是助焊膏均能得到优异的可靠性；但底层BGA在四点弯曲循环可靠性试验中, 采用浸蘸助焊膏工艺的可靠性明显低于印刷工艺。 The results show that the top BGA can obtain good reliability performance regardless of the dipping flux or the dipping paste. However, in the 4-point bending cycle reliability test, the reliability of the dipping paste is obviously lower than that of the printing process for bottom BGA.
12445 此外，增加底部填充工艺需要采用热膨胀系数匹配的材料，否则会降低焊点的温度循环可靠性, 加速其失效的进程。 In addition, with the underfill process, it requires the use of material with matching thermal expansion coefficient. Otherwise, it will reduce the temperature cycling reliability performance of the solder joints and accelerate the process of failure.
12446 为了比对分析多家厂商生产的NAND型Flash存储器的抗辐照能力和数据保持能力, 选择了3种规格 (代号为A, B和C) 的商业级Flash存储器作为研究对象, 设计了故障测试算法, 研究了3种Flash存储器的抗60Coγ射线总剂量的能力。 To compare and analyze the anti-radiation ability and data storage property of different NAND Flash memories produced by various vendors, three kinds of commercial Flash memory ( named A, B and C) were selected for test, the fault testing algorithms were designed and three kinds of Flash memory's resistibility to total ionizing dose of 60Co γ-ray were studied.
12447 首先研究了存储器经常出现的各种故障模型, 并设计了相应的故障测试算法;其次搭建了以数字信号处理器 (DSP) 为核心的硬件测试电路；最后以60Coγ射线作为器件的辐照源, 利用设计好的故障测试算法对辐照环境下的Flash存储器在总剂量值每增加10 krad (Si) 后进行一次故障检测。 Firstly, a variety of fault models that often occurred in memory were studied, and the corresponding fault testing algorithms were designed.Secondly, a hardware test circuit based on the digital signal processor ( DSP) was set up. Finally, based on the radiation source of the 60Co γ-ray, the fault test algorithm was conducted for the Flash memory under irradiated with the total ionizing dose value increase of 10 krad ( Si) .
12448 结果显示, B和C器件在总剂量值达到20 krad (Si) 时开始出现故障, 40 krad (Si) 时出现数据的0→1翻转, 70 krad (Si) 时翻转率高于2%; The results show that faults occur at a total ionizing dose of 20 krad ( Si) for the devices B and C, and the upset of 0→1 is found at 40 krad ( Si) with a upset rate of more than 2% at 70 krad ( Si) .
12449 A器件在40 krad (Si) 时开始出现故障, 70 krad (Si) 时出现0→1翻转, 翻转率为0.6%。 However, faults come into being at 40 krad ( Si) for device A, and the upset of 0→1 appears at 70 krad ( Si) with a rate of 0. 6%.
12450 从抗辐照能力和数据保持能力两个角度观察认为, 商业级的A器件要优于B和C器件。 From the aspects of anti-radiation ability and data storage property, device A has a better performance than devices B and C.
12451 随着3D集成封装的发展, 硅通孔 (TSV) 成为实现3D堆叠中最有前景的技术之一。 With the development of 3D integrated packaging, the through-silicon via ( TSV) has become one of the most promising technologies in 3D stacking package.
12452 通过通孔和微凸点实现上下堆叠IC之间的垂直电连接，先进的TSV技术能够满足3D SIP异构集成、高速宽带、小尺寸及高性能等要求。 By achieving the vertical electrical connection between the stacks through the via and micro-bump, advanced TSV technology can meet the requirements of 3D heterogeneous integration of SIP, high-speed broadband, small size and high performances.
12453 然而, 作为新型互连技术，TSV技术面临许多工艺上的困难和挑战，其可靠性没有得到充分的研究和保证。 However, as a new interconnect technology, the TSV technology is facing with many process difficulties and challenges. The reliability needs to be fully studied and guaranteed.