ID 原文 译文
12434 采用上述刻蚀工艺制备的GIT结构器件的漏端关态电流相比肖特基栅降低约2个量级, 阈值电压约为0.61 V, 峰值跨导为36 m S/mm。 Compared to the Schottky gate HEMT, the leakage current of the GIT structure device prepared by the above mentioned etching process is reduced by about 2 orders of the magnitude with a threshold voltage of about 0. 61 V and the peak transconductance of 36 mS/mm.
12435 采用射频感应耦合等离子体增强磁控溅射装置在p型Si<100>基片上制备Zn3N2薄膜, 用于研究不同氮氩流量比对薄膜结晶质量及微观结构的影响。 Zn3N2 thin films were deposited on p-type Si < 100 > by RF inductively coupled plasma ion source enhanced magnetron sputtering technique, aiming at the investigation of the effects of different N2 and Ar flow ratios on film crystal quality and microstructure.
12436 用X射线衍射仪 (XRD) 、场发射扫描电子显微镜 (FESEM) 、原子力显微镜 (AFM) 和四探针测试仪表征薄膜的微观结构、表面形貌和电学特性。 The microstructure, surface morphology and electrical characteristics of the films were characterized by X-ray diffraction ( XRD) , field emission scanning electron microscope ( FESEM) , atomic force microscope ( AFM) and four-probe tester.
12437 实验结果表明：不同氮氩流量比条件下制备的Zn3N2薄膜均为多晶态, (400) , (411) 和 (332) 晶面生长明显。 The experimental results show that Zn3N2 thin films deposited with different flow ratios of N2 and Ar are polycrystalline, and the orientation growth of ( 400) , ( 411) and ( 332) is more prominent. As the flow ratio of N2 and Ar incereases, the diffraction peak of ( 400) crystal orientation gradually increases until reaching a peak at the flow ratio of 3 ∶ 1, and the crystallinity gradually becomes better.
12438 随着氮氩流量比增加, (400) 晶面衍射峰逐渐增加, 在3∶1时达到极值, 结晶度逐渐变佳；(332) 晶面衍射峰逐渐减小, 结晶度随之变弱；(411) 晶面则无明显变化。 However, the diffraction peak of ( 332) decreases and the crystallinity becomes weaker. The flow ratio of N2 and Ar has stight effect on the growth of ( 411) crystal orientation.
12439 随氮氩流量比增加, 薄膜结晶度、晶粒尺寸和表面平整度先增加后减小。 The film crystallinity, grain size and surface flatness increase first and then decrease with the increase of N2 and Ar flow ratio.
12440 氮氩流量比为2∶1时, 结晶质量和表面平整度达到最佳且导电性能最好, 较大的氮氩流量比有利于磁控溅射制备性能更好的Zn3N2薄膜。 With the N2 and Ar flow ratio of 2∶ 1, the crystalline quality, surface flatness and conductivity are the best. The results indicate that larger flow ratio of N2 and Ar is beneficial to obtain better Zn3N2 film by magnetron sputtering.
12441 研究了穿透模塑通孔 (TMV) 结构的叠层封装 (POP) 热翘曲变形及可靠性。 The warpage behaviors and reliability in through mold via ( TMV) package on package ( POP) were investigated.
12442 采用云纹干涉的方法测量了回流过程中POP上下层球形矩阵排列 (BGA) 的热翘曲变形。 And the thermal warpage of the top and bottom ball grid array ( BGA) were measured by shadow morie method during the reflow process.
12443 通过加速热循环 (ATC) 试验和四点弯曲循环试验, 分别比较了不同组装工艺的POP BGA在相同的热翘曲变形条件下的可靠性。 Through accelerated thermal cycling ( ATC) and 4-point bending cycle tests, the reliability of POP BGA with different assembly processes was compared under the same warpage deformation condition.