ID 原文 译文
12424 为了开发更加精确的电路模型, 基于Al GaN/GaN HEMT开关器件的物理结构得到其等效电路模型。 In order to develop a more accurate circuit model, an equivalent circuit model was obtained based on the physical structure of the AlGaN/GaN HEMT switching device.
12425 利用不同的方法提取开关器件的寄生电容、寄生电感以及寄生电阻。 The parasitic capacitance, parasitic inductance and parasitic resistance of the switch devices were extracted by different methods.
12426 对于栅极附加有千欧姆量级偏置电阻的开关器件提出了一种新的本征参数提取方法。 A new intrinsic elements extraction method for switching devices with kΩ scale bias resistors was proposed.
12427 最后通过引入误差因子来评估该模型的准确性和应用在单刀双掷 (SPDT) 开关电路中检验模型的正确性。 The accuracy of the model was evaluated by introducing the error factor and was verified by implementing in the single-pole double-throw ( SPDT) switching circuit.
12428 结果表明，误差因子E11=E22<2.96%, E12=E21<1.27%, 开关电路拟合S参数与实测S参数结果基本吻合。 The results show the error factor of E11= E22< 2. 96% and E12= E21< 1. 72%. Moreover, the S parameters of the switching circuit are almost consistent with the measured S parameters.
12429 所设计的小信号模型对未来GaN基电路设计提供了一定的理论指导。 The proposed small signal model provides an useful guidance to the design of the GaN based circuit in the future.
12430 p-GaN栅沟槽侧壁与Al GaN表面特性直接影响栅注入 (GIT) 型Al GaN/GaN HEMT器件的输出特性及击穿特性。 The sidewall of p-GaN gate trench and AlGaN surface directly affect the output and breakdown characteristics of gate-injected ( GIT) AlGaN/GaN HEMT devices.
12431 对比研究了两种刻蚀气体 (SF6/BCl3和Cl2/N2/O2) 及不同的刻蚀掩膜层 (Si O2, Si3N4和光刻胶) 对Al GaN上p-GaN的选择性刻蚀结果，利用原子力显微镜 (AFM) 对刻蚀沟槽的表面形貌进行表征，并通过I-V测试其电学性能。 The selective etching results of pGaN on AlGaN by using two types of etching gas ( SF6/BCl3 and Cl2/N2/O2 mixed gas) combined with different etching masks ( SiO2, Si3N4 and photoresist) were compared. The surface morphology of the etched trench was characterized by the atomic force microscopy ( AFM) , and its electrical properties were tested by I-V measurement.
12432 结果显示, 以Cl2/N2/O2为刻蚀气体, 且体积流量为18, 10和2 cm3/min时, p-GaN刻蚀速率稳定且与Al GaN的刻蚀选择比较高 (约30) , 并且可使p-GaN刻蚀自动停止在Al GaN界面处。 The results show that with the etching gas of Cl2/N2/O2 and the flow rate of 18, 10, 2 cm3/min, a stable etching rate can be achieved and the etching selectivity of p-GaN and AlGaN is relatively higher ( about 30). In addition, p-GaN etching can automatically stop at the AlGaN interface.
12433 此外，以Si3N4作为刻蚀掩膜, 可以获得表面光滑、无微沟槽且侧壁垂直度较好的沟槽结构。 By using Si3N4 as an etch mask, a trench structure with smooth microgroove-less surface and good sidewall perpendicularity can be obtained.