ID 原文 译文
12414 基于高纯半绝缘碳化硅衬底, 采用金属有机化学气相沉积 (MOCVD) 工艺生长了AlG aN/GaN高电子迁移率晶体管 (HEMT) 外延材料。 The AlGaN/GaN high electron mobolity transistor ( HEMT) epitaxial material was grown on the high purity semi insulating silicon carbide substrate by metal-organic chemical vapor deposition ( MOCVD) process.
12415 室温下霍尔测试结果表明，外延层二维电子气迁移率为1 950 cm2/ (V·s)，方块电阻为350Ω，电阻均匀性为3%。 The Hall tests results at room temperature show that the mobility of two-dimensional electron gas of the epitaxial leyer is 1 950 cm2/ ( V·s) , the square resistance is 350 Ω and the uniformity is 3%.
12416 通过优化工艺降低了欧姆接触电阻, 提高了器件工作效率。 The ohmic contact resistance was reduced by optimizing the process to increase the device working efficiency.
12417 采用源场板结合栅场板的双场板技术和增大源漏间距, 提高了器件击穿电压。 The breakdown voltage of the device was improved by using double field plates ( source field plate and gate field plate) technology and increasing the distance between drain and source electrode, and the backside thinning.
12418 优化了背面减薄和背面通孔技术, 提高了器件散热能力。 And backside hole technology were optimized to improve the heat dissipation capacity of the device.
12419 采用阻抗匹配技术提升了芯片阻抗。 Impedance of chip was improved by impedance matching technology.
12420 最终采用预匹配技术和金属陶瓷封装技术成功制作50 mm栅宽的AlG aN/GaN HEMT器件。 50 mm gate width AlGaN/GaN HEMT device was fabricated by the pre-matching technique and metal ceramic packaging technology.
12421 直流测试结果表明, 器件击穿电压高达175 V。 The DC testing results show that the breakdown voltage of the device is up to 175 V.
12422 微波测试结果表明, 在50 V工作电压、1.3 GHz下, 器件输出功率达350 W, 功率附加效率达81%, 功率增益大于13 dB。 The microwave testing results show that the device exhibits the output power of 350 W, power added efficiency of 81% and power gain of more than 13 dB at 1. 3 GHz and the operating voltage of 50 V.
12423 GaN高电子迁移率晶体管 (HEMT) 开关器件模型的研究对提高电路性能和缩短研发周期有着重要的意义。 The research on the GaN HEMT switching device model is of great significance to improve the circuit performance and shorten the circuit development cycle.