ID 原文 译文
12404 为了抑制这种电源纹波, 设计了一款1 MHz带宽内高电源电压抑制比 (PSRR) 、超低功耗、无片外电容低压差线性稳压器 (LDO) 。 A 1 MHz bandwidth-extended power supply rejection ratio ( PSRR) , ultra-low power consumption, capacitorfree low drop-out regulator ( LDO) was designed to suppress the power supply ripple.
12405 利用超级源跟随器结构改变传统LDO环路的极点分布, 将输出极点作为环路主极点, 将低频PSRR带宽有效拓展到1 MHz。 Super source follower structure was adopted to change the loop poles distribution in traditional LDO structure, which makes the output pole become the dominant pole and effectively expands the low frequency PSRR bandwidth to 1 MHz.
12406 利用动态偏置技术和双零点补偿结构保证环路稳定性。 The dynamic biase technology and double-zero compensation structure were used to ensure the stability of the loop.
12407 该LDO采用TSMC 0.18μm CMOS工艺实现, 芯片面积约0.017 mm2。 The proposed LDO with an area of about 0. 017 mm2 was fabricated in TSMC0. 18 μm COMS process.
12408 测试结果表明：LDO在1 MHz频率范围内的PSRR小于-46 dB, 轻负载下的PSRR可达-57 dB；电路消耗0.33～3.4μA的静态电流;在工作电压为1.1～3 V时输入电压调整率为4.6 mV/V；在负载电流为0～25μA时负载调整率为0.3 mV/μA；该LDO仅采用35 pF片上电容。 The measured results show that the proposed LDO achieves a PSRR less than -46 dB at the frequency of 1 MHz and even -57 d B under light load condition. The quiescent current of the circuit is between 0. 33 and 3. 4 μA. Additionally, the line regulation is 4. 6 mV/V with a voltage supply range from 1. 1 V to 3 V, and the load regulation is 0. 3 mV/μA with the load current range from 0 μA to 25 μA. Moreover, the total on-chip capacitance of the LDO is as little as 35 p F.
12409 采用一系列不同栅长和结构的T型栅器件来研究凹栅槽结构抑制短沟道效应和提高频率特性的作用。 A series of T-shaped gate devices with different gate lengths and structures were fabricated to investigate the effects of recessed gate structure on reducing the short channel effects and improving the frequency characteristics of the devices.
12410 随着栅长不断缩短, 短沟道效应逐渐明显，栅长从300 nm缩短至100 nm时，亚阈值摆幅逐渐增大，栅对沟道载流子的控制变弱，且器件出现软夹断现象。 As the gate length shortens, the short channel effects become more and more obvious. When the gate length is shortened from 300 nm to 100 nm, the subthreshold swing gradually increases, and the control of gate on the channel charge becomes weaker with soft pinchoff.
12411 凹栅槽结构可以降低器件的亚阈值摆幅，提高开关比，栅长100 nm常规结构器件的亚阈值摆幅为140 mV/dec，开关比为106，而凹栅槽结构器件的亚阈值摆幅下降为95 mV/dec，开关比增大为107，凹栅槽结构明显抑制了短沟道效应。 Recessed gate structure could reduce the subthreshold swing and improve the switching ratio. The subthreshold swing and switch ratio of conventional structure devices with 100 nm gate length is 140 mV/dec and 106, respectively, while the corresponding parameters of the recessed gate structure device are improved to 95 mV/dec and 107, respectively.
12412 在漏源电压为20 V时，100 nm栅长的凹栅槽结构器件的截止频率和最高振荡频率达到了65.9和191 GHz，同常规结构相比, 分别提高了5.78%和4.49%。 At the drain-source voltage of 20 V, compared with the conventional structure, the cut-off frequency and maximum oscillation frequency of 100 nm gate length recessed gate devices reach 65. 9 and 191 GHz ( increasing by 5. 78% and 4. 49% when compared to the regular structure) , respectively.
12413 由于凹栅槽结构缩短了栅金属到二维电子气 (2DEG) 沟道的间距，增大了纵横比，所以能够改善器件的频率特性。 The improved frequency performance of the recessed gate structure isbenefited from the reduced space between the gate metal and two-dimensional electron gas ( 2DEG) channel as well as the increased aspect ratio.