ID 原文 译文
12384 结果表明，光照时会导致太阳电池表面减反射膜 SiN：H /Si 界面处积聚大量固定电荷，增大界面态密度，破坏电池表面钝化层结构，导致开路电压和短路电流产生较大衰减，35 kWh /m2光辐照后 n 型硅太阳电池效率衰减 3. 6%。 The results show that light soaking can cause a large amount of fixed charges to accumulate atthe SiN: H /Si interface on the surface of the solar cell antireflection film，increasing the interface statedensity and destroying the passivation layer structure on the cell surface，resulting in large degradation ofthe open circuit voltage and short-circuit current． The efficiency of the n-type silicon solar cell decreasedby 3. 6% after 35 kWh /m2 light soaking.
12385 在 380 ℃低温退火处理后电池效率基本可恢复到初始状态。 After the low temperature annealing treatment at 380 ℃，the cell efficiency can basically return to the initial state．
12386 内量子效率测试结果表明光辐照后电池短波区域响应减弱，前表面界面效应导致电池效率发生较大衰减。 The internal quantum efficiency test results showthat the response in the short wave length range is weakened after light soaking，and the interface effect of the front surface induces the large degradation of the cell efficiency．
12387 采用低压化学气相淀积 ( LPCVD) 非晶 Si 填槽工艺代替 LPCVD 多晶 Si 填槽工艺，对沟槽绝缘栅双极型晶体管 (IGBT) 器件的沟槽进行非晶 Si 回填，研究并优化了高深宽比非晶Si 填槽工艺。 The low pressure chemical vapor deposition (LPCVD) polycrystalline Si filling processwas substituted by the LPCVD amorphous Si filling process to fill back the trench of the trench insulatedgate bipolar transistor (IGBT) device with the amorphous Si． The amorphous Si filling process with highratio of depth and width was researched and optimized．
12388 分析了 LPCVD 非晶 Si 工艺参数如 PH3 体积流量和沉积时间等对 LPCVD 非晶 Si 填槽能力的影响，通过调制 P 掺杂浓度和优化非晶 Si 淀积时间，得到槽底侧壁与槽口侧壁非晶 Si厚度差值为 0. 022 μm 的基准非晶 Si 填槽工艺，优化了 LPCVD 非晶 Si 反复多次填槽工艺条件。 The effects of LPCVD amorphous Si process parameters such as the volume flow of PH3 and the deposition time on the filling capability of LPCVD amorphous Si were analyzed． By adjusting the P doping concentration and optimizing the deposition time ofamorphous Si，the fiducial amorphous Si filling process with an amorphous Si thickness difference between the bottom and top side walls of the trench of 0. 022 μm was obtained. The LPCVD amorphous Sirepeated filling process conditions were optimized．
12389 结果表明，采用优化后的工艺可实现沟槽栅 IGBT 器件沟槽非晶 Si 无缝回填，器件的栅极电阻降低了 0. 150 Ω，漏电流降低了 1. 408 nA，成品率提升了 0. 4%。 The results show that the optimized process can realizethe amorphous Si seamless backfill of the trench IGBT device． The gate resistance of the device is reducedby 0. 150 Ω，the leakage current is reduced by 1. 408 nA and the yield is increased by 0. 4%．
12390 有机-无机杂化钙钛矿具有载流子扩散长度长、发光效率高等特点, 是一种性能优良的半导体材料, 也是一种极具潜力的激光增益介质, 受到了光伏、激光等多个领域的广泛关注。 Organic-inorganic hybridized perovskite, which is an excellent semiconductor material and a promising laser gain medium due to its good properties of long carrier diffusion length, high luminous efficiency, etc., has attracted widespread attention in many fields such as photovoltaics, laser and so on.
12391 概述了利用有机-无机杂化钙钛矿作为增益介质研发的薄膜型多晶钙钛矿激光器、单晶钙钛矿激光器以及微盘钙钛矿激光器的研究进展。 Research progresses of lasers using organic-inorganic hybridized perovskite as gain medium are summarized, including polycrystalline thin film perovskite lasers, single crystalline perovskite lasers and micro-disk perovskite lasers.
12392 介绍了具有优异的电学性能和光学性能的有机-无机杂化钙钛矿制备方法, 分析了影响有机-无机杂化钙钛矿激光器性能的主要因素。 The preparation methods of organic-inorganic hybridized perovskites with excellent electrical and optical properties are reviewed, and the main factors affecting the performance of organic-inorganic hybridized perovskites lasers are analyzed.
12393 结果表明，相对于其他类型的激光器, 单晶钙钛矿纳米线结构具有更低的激光阈值、更窄的光谱宽度, 是实现纳米激光的最佳选择之一。 The results show that single crystalline nanowire structures, which have lower laser threshold and narrower spectral width than other types of perovskite lasers, are one of the best choices for nanolasers.