ID 原文 译文
12374 结果表明，相对于纯铝电极结构，铜质量分数为2%的铝铜合金电极在几乎不影响反射率的前提下，可显著提高电极的耐电流性能。 The results indicate that compared with the pure Al electrode structure，the Al-Cu alloy electrodewith the Cu mass fraction of 2% can significantly enhance the current tolerance of the electrode，hardly affecting the reflectivity．
12375 以铝铜合金为电极的 LED 芯片在老化过程中，可有效阻止铝的电迁移，从而显著提升了 LED 芯片的可靠性。 The LED chips with Al-Cu alloy electrodes can effectively prevent the electromigration of Al during the aging process，thus greatly improving the reliability of LED chips
12376 采用氢化物气相外延 (HVPE) 方法在 2 英寸 (1 英寸= 2. 54 cm) c 面蓝宝石衬底上外延生长了高质量 GaN 单晶薄膜。 High quality GaN single crystal thin films were epitaxially grown on the 2-inch (1 inch =2. 54 cm) c-plane sapphire substrate by hydride vapor phase epitaxy (HVPE) method．
12377 在 GaN 生长过程中引入点状和条状两种金属 Ti 掩膜图形层，研究了不同 Ti 掩膜图形层对外延生长 GaN 薄膜晶体质量的影响。 Spot-and stripeshape metal Ti mask pattered layers were introduced during the GaN growth process to investigate the effect of different Ti mask patterned layers on the crystal quality of epitaxially grown GaN thin films．
12378 使用微分干涉相差显微镜(DICM)、扫描电子显微镜 (SEM)、阴极荧光光谱 (CL)、喇曼光谱和 X 射线衍射 (XＲD) 对制备的 GaN 样品结构和形貌进行了表征分析。 The structure and morphology of the prepared GaN samples were characterized and analyzed by differential interference contrast microscope ( DICM)，scanning electron microscope ( SEM)，cathodoluminescence(CL )，Ｒaman spectrum and X-ray diffraction ( XＲD)．
12379 实验结果表明，Ti 掩膜图形层的引入可以在一定程度上改善 GaN 薄膜的表面形貌，缓解材料中的应力，降低 GaN 材料中的位错密度，提高材料的结晶质量。 The experimental results show that theintroduction of the Ti mask pattered layer can improve the surface morphology of the GaN thin films to acertain extent，relieve the stress in the material，reduce the dislocation density in the GaN material，andimprove the crystal quality of the GaN material．
12380 同时发现，相比于点状图形，条状 Ti 图形掩膜层可以更加有效地改善 GaN 材料的晶体质量，将位错密度降低到 3. 2×106 cm－2以下。 Moreover，it is also found that compared with the spotshape pattern，the strip-shape Ti mask patterned layer can improve the crystal quality of the GaN materialmore effectively，and reduce the dislocation density of the GaN epitaxial films to less than 3. 2×106 cm－2．
12381 基于 n 型晶体硅太阳电池，分析了经光辐照后电池各性能参数的变化，探究了 n 型晶体硅太阳电池光诱导衰减机理。 Based on n-type crystalline silicon solar cells，the change of various performanceparameters of the cells after light soaking was analyzed，and the light induced degradation mechanism of n-type solar cells was explored．
12382 使用工业化设备在大面积 (156 mm×156 mm) n 型单晶硅片上制备太阳电池。 Solar cells were fabricated on large-area (156 mm × 156 mm) n-typemonocrystalline silicon wafers with industrial equipment．
12383 利用太阳光谱模拟仪对制备的太阳电池进行光照处理，对比各阶段太阳电池电性能参数。 The prepared solar cells were irradiated by the solar spectral simulator and the electrical performance parameters of the solar cells in each stage were compared．