| ID | 原文 | 译文 |
| 12364 | 芯片面积为 0. 168 mm2。 | The chip area is 0. 168 mm2． |
| 12365 | 为了满足射频系统小型化的需求，提出了一种基于硅基板的微波芯片倒装封装结构，解决了微波芯片倒装背金接地的问题。 | In order to meet the requirement of radio frequency system miniaturization，a flip-chippackage structure for the microwave chip based on silicon substrate was proposed，which solved the problem of microwave chip flip-back gold grounding． |
| 12366 | 使用球栅阵列 (BGA) 封装分布为周边型排列的 GaAs 微波芯片建立了三维有限元封装模型，研究了微波芯片倒装封装结构在－55 ～ 125 ℃ 热循环加载下金凸点上的等效总应变分布规律，同时研究了封装尺寸因素对于金凸点可靠性的影响。 | A three-dimensional finite element packaging model wasestablished by using a ball grid array (BGA) package with a peripherally arranged GaAs microwave chip．The distribution of the equivalent total strain sustained in the gold bumps of the flip-chip package structure of microwave chips under the thermal cycling load from －55 ℃ to 125 ℃ was studied． Meanwhile，the influences of the package size factors on the reliability of gold bumps were investigated． |
| 12367 | 通过正交试验设计，研究了凸点高度、凸点直径以及焊料片厚度对凸点可靠性的影响程度。 | Through Orthogonal experimental design，the influence degree of bump height，bump diameter and solder sheetthickness on the reliability of bumps was studied． |
| 12368 | 结果表明：金凸点离芯片中心越近，其可靠性越差。 | The results show that the closer the gold bump is to thechip center，the worse its reliability is. |
| 12369 | 上述各结构尺寸因素对凸点可靠性影响程度的主次顺序为：焊料片厚度＞金凸点直径＞金凸点高度。 | The effects of the structural size factors on the reliability of thebumps can be ranked as: solder sheet thickness＞gold bump diameter＞gold bump height． |
| 12370 | 因此，在进行微波芯片倒装封装结构设计时，应尽可能选择较薄的共晶焊料片来保证金凸点的热疲劳可靠性。 | Therefore，inthe microwave chip flip-chip packaging structure design，the thinner eutectic solder sheets should be selected as far as possible to ensure the thermal fatigue reliability of gold bumps. |
| 12371 | 发光二极管 (LED) 芯片反射电极中铝的稳定性对芯片的可靠性至关重要，少量铜的加入可改善铝的耐电流性。 | The stability of Al in light-emitting diodes (LEDs) reflective electrodes plays an important role in the reliability of chips． The addition of a small amount of Cu to Al can improve the currenttolerance of Al． |
| 12372 | 理论计算了电子束蒸镀沉积时，镀源和镀膜中铜质量分数的对应关系。 | The correspondence relation between the Cu mass fractions in evaporation source and deposited film was theoretically calculated during electron beam evaporation． |
| 12373 | 对纯铝和不同铜质量分数的铝铜合金进行了金属线耐电流测试和薄膜反射率测试，并对纯铝或铝铜合金电极的 LED 芯片进行了老化测试。 | The metal wire currenttolerance tests and film reflectivity tests were carried out on the pure Al and Al-Cu alloys with different Cumass fractions． And the aging tests were also performed on LED chips with pure Al and Al-Cu alloy electrodes． |