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12344 SiO 组分随退火温度的升高而减少，在退火温度为 500 ℃及以上时检测到 Mo—C 成分，说明 Mo 与 4H-SiC 发生反应。 The SiO component decreases with the increase of annealing temperature，and the Mo—C component was detected at the annealing temperature of 500 ℃ and above，indicating the reaction of Mo and 4H-SiC．
12345 为提高电容器的比电容，设计了基于三维 (3D) 结构的金属－绝缘体－金属 (MIM)电容器。 In order to improve the specific capacitance of the capacitor，the three-dimensional(3D) structure based metal-insulator-metal (MIM) capacitor was designed．
12346 采用原子层沉积 (ALD) 技术制备电容器功能薄膜层，通过建立 3D 结构原子层沉积理论模型，拟合得到了原子层沉积过程中薄膜覆盖率与 3D 结构之间的依赖关系。 The functional film layer ofthe capacitor was prepared by atomic layer deposition (ALD) technology，and the dependency relationship between the film coverage and 3D structure during atomic layer deposition was obtained by establishing a theoretical model of 3D structure atomic layer deposition.
12347 基于该模型优化了工艺参数，制备了不同介质层厚度的电容器，并对器件进行了 C-V 和 I-V 特性测试，得到电容器击穿场强和介电常数均值分别为 6. 68 MV/cm 和 7. 95。 Based on this model，the processparameters were optimized and the capacitors with different thicknesses of the dielectric layer wereprepared． The C-V and I-V characteristics tests of the devices were carried out，showing that the averagevalues of the breakdown field strength and dielectric constant of the capacitors are 6. 68 MV/cm and7. 95，respectively．
12348 同时，制备的 3D MIM 电容器的比电容达到 212. 5 fF /μm2，相比常规平面电容器，其电容密度提高了一个数量级。 Meanwhile，the specific capacitance of the prepared 3D MIM capacitor reaches 212. 5 fF /μm2，and its capacitance density is increased by an order of magnitude compared with the conventional planar capacitor．
12349 且该电容器击穿场强和介电常数与薄膜厚度之间具有良好的线性关系，表明理论模型合理，实现了基于 3D 结构的原子层沉积薄膜可控生长。 The breakdown field strength and dielectric constant of the capacitor have agood linear relationship with the film thickness，indicating that the theoretical model is reasonable and the controllable growth of the 3D structure based atomic layer deposition film is realized．
12350 基于 0. 13 μm eFLASH 工艺技术，成功制备了 Sence-Switch 型 pFLASH 单元，并对其性能进行了研究。 A Sence-Switch pFLASH cell which includes a programming /erasing transistor (T1 ) anda signal transmission transistor (T2 ) sharing common floating and controlling gates was successfully prepared based on 0. 13 μm eFLASH process technology and its performance was studied．
12351 该单元由两个共享浮栅和控制栅的编程/擦除管 (T1 ) 和信号传输管 (T2 ) 组成，采用带带遂穿 (BTBT) 编程方式和福勒－诺德海姆 (FN) 遂穿擦除方式实现了其 “开/关”态功能，并对其 “开/关”态特性进行表征，同时，研究了其耐久性和电荷保持特性。 The band-to-bandtunneling (BTBT) programming mode and Fowler-Nordheim (FN) tunneling erasing mode were used torealize the“on /off”states function，and the “on /off”states characteristics were characterized． Meanwhile，the endurance and charge retention of the cell were studied．
12352 实验结果表明，该单元具有较优的 “开/关”态特性和电参数一致性，T1 /T2 管阈值窗口的均值、均一性分别约为 9. 2 V 和 2. 4%; 在工作电压为－1. 5 V 条件下，T2 管 “关”态的漏电流均在 1 pA /μm以下，T2 管 “开”态的驱动电流均值为 116. 22 μA /μm，均一性为 5. 61%; 该单元循环擦/写次数可达 10 000 次。 The experimental results show that thecell has better “on /off”states characteristics and electrical parameters consistency，and the averagethreshold window and consistency of T1 /T2 transistors are approximately 9. 2 V and 2. 4%，respectively．Under － 1. 5 V working voltage，the leakage currents of the T2 transistor at “off”state are below1 pA/μm，the average driving current of the T2 transistor at “on”state is 116. 22 μA/μm，and theuniformity can reach 5. 61%． The erasing/writing cycles of the cell can reach 10 000．
12353 同时，在 25 ℃的 “开/关”态应力条件下，该 Sence-Switch 型 pFLASH 单元寿命大于 10 年。 Meanwhile，the lifetimeof the Sence-Switch pFLASH cell is more than 10 years under the“on/off”states stress condition at 25 ℃．