ID 原文 译文
12334 测试结果表明，四通道直接上变频发射芯片的发射功率可达 15. 4 dBm，动态增益不小于 36. 3 dB，通道隔离度不小于 43. 3 dB。 The test results show that the transmitting power ofthe four-channel direct up-conversion transmitter chip can reach 15. 4 dBm，the dynamic gain is not lessthan 36. 3 dB and the channel isolation is not less than 43. 3 dB．
12335 芯片的功耗为 837. 6 mW。 The power consumption of the chip is 837. 6 mW．
12336 利用金属有机化学气相沉积 (MOCVD) 制备了 Mg 掺杂的 p-GaN 外延材料，并在不同气氛下对其进行退火，系统研究了不同退火气氛对 p-GaN 材料性质及欧姆接触性能的影响。 Mg-doped p-GaN epitaxy materials were prepared by metal organic chemical vapor deposition (MOCVD) and annealed in various ambients． The effects of various annealing ambients on the material properties and ohmic contact characteristics of p-GaN materials were studied systemically．
12337 利用 X 射线衍射 (XＲD)、光致发光 (PL) 谱和原子力显微镜 (AFM) 对样品进行测试和表征。 The samples were tested and characterized by X-ray diffraction (XＲD)，photoluminescence ( PL) spectra andatomic force microscope (AFM)．
12338 结果表明，不同气氛退火均能降低 p-GaN 材料的 XＲD 半高宽，改善其晶体质量，并提高其迁移率; 此外，相较于纯 N2 和纯 O2，空气气氛退火的 p-GaN 材料的空穴浓度最高，欧姆接触性能最优，其比接触电阻率可低至 4. 49×10－4 Ω·cm2。 The results indicate that various annealing ambients can decrease theXＲD full width at half maximum，improve the crystal quality and increase the mobility of the p-GaN material． Moreover，compared with annealing in pure N2 and pure O2，the p-GaN material annealed in airambient exhibits the highest hole concentration and best ohmic contact characteristics with a specific contact resistivity of 4. 49 × 10－4 Ω·cm2．
12339 分析认为：空气气氛退火减少了 p-GaN 中的氮空位，降低了自补偿效应；空气中的 O2 与 H 结合，抑制了 H 的钝化效应，提高了 Mg 的激活率，进而改善了 p-GaN 材料的欧姆接触特性。 Analysis suggests that the self-compensating effect is loweredthrough reducing the nitride vacancies at annealing in air and the activation efficiency of Mg is enhanced through inhibiting the passivation effect of H resulted from the combination of O2 and H in air． Thus，ohmic contact characteristics of the p-GaN materials were improved.
12340 为研究退火温度对肖特基接触界面特性的影响，在不同温度下测试了不同退火温度处理的 Mo /4H-SiC 肖特基接触的 I-V 及 C-V 特性。 The I-V and C-V characteristics of the Mo /4H-SiC Schottky contacts formed at differentannealing temperatures were measured at different testing temperatures to study the influence of annealingtemperature on Schottky contact interface characteristics．
12341 根据金属－绝缘层－半导体 (MIS) 结构二极管模型理论，认为在金属与半导体间存在薄介质层，通过估算介质层电容值，得到了肖特基接触界面态密度 (Nss) 的能级分布情况，Nss约为 1012 eV－1·cm－2量级。 According to the metal-insulator-semiconductor(MIS) transistor model theory，it is assumed that the thin dielectric layer between metal and semiconductor exists． The energy level distribution of the interface states densities (Nss) of the Schottky contact was obtained by estimating the capacitance of the dielectric layer，and the Nss is about 1012 eV－1·cm－2 magnitude．
12342 退火温度升高，Nss的能级分布靠近导带底; 测试温度升高，Nss增加且其能级分布远离导带底。 The energy level distribution of Nss shifts towards the conductance band edge with the increase of annealing temperature and shifts away from the conductance band edge with the increase of testing temperature．
12343 利用 X 射线光电子能谱 (XPS)分析表征肖特基接触界面态化学组分，分析结果证实接触界面存在 SiO。 The X-ray photoelectron spectroscopy (XPS) analysis was used to characterize the Schottkycontact interface chemical composition． The analysis results confirm the existence of SiO at the contact interface．